p‐type conducting ZnO: fabrication and characterisation

Kamińska, E.; Piotrowska, Anna; Kossut, J.; Butkutė, Renata; Dobrowolski, W.; Lukasiewicz, R. J.; Barcz, A.; Jakieła, R.; Dynowska, E.; Przeździecka, E.; Aleszkiewicz, M.; Wojnar, P.; Kowalczyk, E.

doi:10.1002/pssc.200460659

Cited by 40 publications

(13 citation statements)

References 13 publications

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“…Hydrogen is an impurity that can be present in ZnO made by many fabrication techniques [3,9,[23][24][25]]. An isolated interstitial H is predicted to be exclusively donor in ZnO, i.e., it always exists in the form of an H + and bonds with the host O atom [26].…”

Section: Impurity and Defect Complexes Analysismentioning

confidence: 99%

Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD

Asher

Limpijumnong

et al. 2006

Journal of Crystal Growth

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Section: Impurity and Defect Complexes Analysismentioning

confidence: 99%

Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD

Asher

Limpijumnong

et al. 2006

Journal of Crystal Growth

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“…Similarly Zn 3 N 2 nanoneedles have been prepared by Khan et al [10] and by Khan and Cao [11] who found an indirect energy band gap of 2.81 eV. In contrast, Zn 3 N 2 layers [12] have been studied in more detail, while p-type ZnO layers have been prepared by thermal oxidation of Zn 3 N 2 [13] which is important since ZnO is usually n-type due to oxygen defects. It should be noted, however, that p-type ZnO layers have also been obtained by nitrogen doping of ZnO using small flows of NH 3 [14,15], which is a topic of active interest since nitrogen is considered to be a shallow-like, p-type impurity in ZnO.…”

Section: Introductionmentioning

confidence: 99%

Zn3N2 nanowires: growth, properties and oxidation

2013

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Zinc nitride (Zn3N2) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3 via the reaction of Zn with NH3 including H2 between 500°C and 600°C. These exhibited an optical band gap of ≈ 3.2 eV, estimated from steady state absorption-transmission spectroscopy. We compared this with the case of ZnO NWs and discussed the surface oxidation of Zn3N2 NWs which is important and is expected to lead to the formation of a Zn3N2/ZnO core-shell NW, the energy band diagram of which was calculated via the self-consistent solution of the Poisson-Schrödinger equations within the effective mass approximation by taking into account a fundamental energy band gap of 1.2 eV. In contrast, only highly oriented Zn3N2 layers with a cubic crystal structure and an optical band gap of ≈ 2.9 eV were obtained on Au/Si(001) using the same growth conditions.

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“…There is a need for high-quality ptype ZnO films to produce LEDs and LDs. There are reports on p-type ZnO films grown heteroepitaxially using molecular beam epitaxy (MBE), pulsed laser deposition (PLD), metal-organic chemical vapor deposition (MOCVD) and magnetron sputtering [1][2][3][4]. However, homoepitaxial growth of ZnO films seems to be best for obtaining high-quality films because of no mismatches of a lattice constant and a thermal expansion coefficient.…”

mentioning

confidence: 99%

Characteristics of high‐quality homoepitaxial ZnO (0001) films grown by the plasma‐assisted reactive evaporation method

Nakagawa

Abe

Chiba

et al. 2009

Phys. Status Solidi (c)

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Homoepitaxial growth of high‐quality non‐doped and nitrogen‐doped ZnO (0001) films could be achieved by the plasma‐assisted reactive evaporation (PARE) method under the conditions of constant oxygen gas flow rate and several nitrogen gas flow (Nf) rates for nitrogen doping. The values of FWHM of XRC for (0002) and (10‐10) planes of the non‐doped ZnO thin film were 31 and 35 arcsec., respectively. The values of FWHM of XRC for (0002) and (10‐10) planes of the nitrogen‐doped ZnO thin film were 49 and 38 arcsec., respectively. The RMS roughness of surfaces of those films measured by AFM was about 0.1‐0.2 nm. In PL spectra (5 K) of the films, the intensity of D0X emission was decreased with increase in Nf rate. However, A0X and DAP emissions were clearly observed in the films grown under conditions of nitrogen gas flow. The intensity ratio between A0X and D0X emissions increased with increase in Nf rate. A‐free exciton (FEA) and n=2 state of FEA emissions were observed at around 3.378 and 3.424 eV, respectively, independently of the Nf rate. Again, in PL spectra (300 K) of the films, the intensity of visible light emission decreased and that of near‐band‐edge emission also decreased with increase in Nf rate. PL spectra of nitrogen‐doped ZnO thin films and emission of ultraviolet light from diodes fabricated using the nitrogen‐doped ZnO films showed that the homoepitaxial films grown by the PARE method were of high quality and that nitrogen atoms fulfilled oxygen vacancies and acted as acceptors in the nitrogen‐doped ZnO thin films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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p‐type conducting ZnO: fabrication and characterisation

Cited by 40 publications

References 13 publications

Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD

Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD

Zn3N2 nanowires: growth, properties and oxidation

Characteristics of high‐quality homoepitaxial ZnO (0001) films grown by the plasma‐assisted reactive evaporation method

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