Zn3N2 nanowires: growth, properties and oxidation

Zervos, Matthew; Karipi, Chrystalla; Othonos, Andreas

doi:10.1186/1556-276x-8-221

Cited by 11 publications

(9 citation statements)

References 33 publications

(50 reference statements)

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“…The optical band gap of Zn 3 N 2 thin films has recently been reported to range between 1.31 and 1.48 eV, suggesting that the largest diameter QDs (8.9 nm) are only subject to weak quantum confinement, if any. This is consistent with the calculated value for the exciton Bohr radius ( a B ), which ranges from ∼1 to ∼3.8 nm depending on which values of effective mass and dielectric constant from the literature are used (see Table S1 in the Supporting Information). ,,,,− The full-width half maxima (fwhm) of the PL spectra were 0.46 eV (95 nm), 0.41 eV (104 nm), 0.38 eV (103 nm), and 0.32 eV (180 nm), respectively, i.e., about 20% of the peak energy for each sample. This is in agreement with the polydispersity observed in the size frequency histograms and consistent with the lack of pronounced absorption peaks.…”

Section: Resultssupporting

confidence: 85%

Confinement Effects and Charge Dynamics in Zn₃N₂ Colloidal Quantum Dots: Implications for QD-LED Displays

Ahumada-Lazo

Fairclough

Hardman

et al. 2019

ACS Appl. Nano Mater.

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Zinc nitride (Zn 3 N 2 ) colloidal quantum dots are composed of nontoxic, low-cost, and earth-abundant elements. The effects of quantum confinement on the optical properties and charge dynamics of these dots are studied using steady-state optical characterization and ultrafast fluencedependent transient absorption. The absorption and emission energies are observed to be size-tunable, with the optical band gap increasing from 1.5 to 3.2 eV as the dot diameter decreased from 8.9 to 2.7 nm. Size-dependent absorption cross sections (σ = 1.22 ± 0.02 × 10 −15 to 2.04 ± 0.03 × 10 −15 cm 2 ), single exciton lifetimes (0.36 ± 0.02 to 0.65 ± 0.03 ns), as well as Auger recombination lifetimes of biexcitons (3.2 ± 0.4 to 5.0 ± 0.1 ps) and trions (20.8 ± 1.8 to 46.3 ± 1.3 ps) are also measured. The degeneracy of the conduction band minimum (g = 2) is determined from the analysis of the transient absorption spectra at different excitation fluences. The performance of Zn 3 N 2 colloidal quantum dots thus broadly matches that of established visible light emitting quantum dots based on toxic or rare elements, making them a viable alternative for QD-LED displays.

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Section: Resultssupporting

confidence: 85%

Confinement Effects and Charge Dynamics in Zn₃N₂ Colloidal Quantum Dots: Implications for QD-LED Displays

Ahumada-Lazo

Fairclough

Hardman

et al. 2019

ACS Appl. Nano Mater.

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“…. ϵ r = 5.3 . According to the Matthiessen's rule and Brooks–Herring–Dingle (BHD) theory ( µ I presents ionized impurity mobility given in Ref.…”

Section: Resultsmentioning

confidence: 99%

Zinc nitride as a potential high-mobility transparent conductor

Cao

Ninomiya

Yamada

2016

Phys. Status Solidi A

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Polycrystalline and epitaxial zinc nitride (Zn3N2) films were grown by a reactive rf‐magnetron sputtering technique. Phase‐pure films were grown but XPS results indicated that a small amount of oxygen exists within all Zn3N2–xOx films. We prove experimentally that substitutional O on the N site (normalOnormalN•) can be treated as an electron donor. The electrical and optical properties can be tuned by tuning the x values. High mobilities were achieved in both polycrystalline and epitaxial Zn3N2 films. In‐depth mobility analyses revealed both grain boundary scattering and ionization impurity scattering have main contribution to the electron transport in polycrystalline films, while neutral impurity scattering has negligible impact. The effective masses at the bottom of the conduction band were calculated to be (0.08 ± 0.03)m0, which is quite small. Such small electron effective masses contribute to lead to the high carrier mobility observed in Zn3N2. Optical bandgaps lie in a range from 2.2 to 2.7 eV, which may be ascribed to interstitial N 2p in‐gap state defects. We expect that zinc nitride with good transparency can be attained if the number of such defects is diminished. Our results in this work suggest that Zn3N2 is a potential choice for cost‐effective transparent semiconductor devices with high mobility.

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“…Z is the relative charge of the ionized impurity, n I is the density of the ionized scattering center, e is the elemental charge, and ℏ is the reduced Planck constant. We used ε r = 5.3 and m e * = 0.3 m 0 , for the calculation of μ I . We calculated μ I for two cases: in the first case, free carriers are generated entirely from substitutional oxygen O N • (μ I o ), and in the second case, free carriers originate entirely from nitrogen vacancy (μ I v ).…”

Section: Resultsmentioning

confidence: 99%

Oxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor

et al. 2015

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While many types of transparent conducting oxides (TCOs) have been developed, nitride-based transparent conductors remain rare. We examined the properties of zinc nitride doped with oxygen (Zn 3 N 2−x O x ) as a potential nitridebased transparent conductor. Electron density on the order of 10 20 cm −3 was achieved by heavy oxygen doping. A minimal resistivity (ρ) of 6.2 × 10 −4 Ω cm, comparable to those of TCOs, was observed for x = 0.19. Notably, the Zn 3 N 1.81 O 0.19 films had high electron mobility of 85 cm 2 V −1 s −1 , 2−3 times larger than the values for TCOs. Detailed analyses of mobility revealed that the electron transport was governed by ionized impurity scattering, and the dominant scattering center was substitutional oxygen. The contributions of additional scattering mechanisms were relatively minor. These findings explain the high observed mobility in Zn 3 N 2−x O x films. Contrary to our expectations, visible transmittance of Zn 3 N 2−x O x films was below 40%. X-ray photoelectron spectrometry suggested the existence of self-interstitial nitrogen (N I ) in Zn 3 N 2−x O x films. Low transmittance was attributable to optical absorption by electron transitions between the in-gap state originated from N I bonded to lattice nitrogen (N N ) and the band states. These results suggest that, when the formation of N N −N I bond is suppressed, Zn 3 N 2−x O x can be a high-mobility transparent conductor.

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Zn3N2 nanowires: growth, properties and oxidation

Cited by 11 publications

References 33 publications

Confinement Effects and Charge Dynamics in Zn₃N₂ Colloidal Quantum Dots: Implications for QD-LED Displays

Confinement Effects and Charge Dynamics in Zn₃N₂ Colloidal Quantum Dots: Implications for QD-LED Displays

Zinc nitride as a potential high-mobility transparent conductor

Oxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor

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Zn3N2 nanowires: growth, properties and oxidation

Cited by 11 publications

References 33 publications

Confinement Effects and Charge Dynamics in Zn3N2 Colloidal Quantum Dots: Implications for QD-LED Displays

Confinement Effects and Charge Dynamics in Zn3N2 Colloidal Quantum Dots: Implications for QD-LED Displays

Zinc nitride as a potential high-mobility transparent conductor

Oxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor

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Confinement Effects and Charge Dynamics in Zn₃N₂ Colloidal Quantum Dots: Implications for QD-LED Displays

Confinement Effects and Charge Dynamics in Zn₃N₂ Colloidal Quantum Dots: Implications for QD-LED Displays