Three-wave nonlinear interactions of space charge waves in thin n-GaAs fdm, possessing the negative differential mobility, are simulated. An effective frequency upconversion with amplification in millimeter wave range is demonstrated. The Poisson's equation and the set of quasi-hydrodynamic equations have been simulated by the finite difference method. An influence of transverse inhomogeneity io the plane of the fdm on three-wave interaction in active medium has been investigated.
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices were fabricated on high-index silicon (114) surfaces and their threshold voltage (Vth) and interface-states density (Dit) parameters were both evaluated for the first time. Even though MOSFET devices aligned at 0°, 30°, 60° and 90° off the equivalent [110) direction present two closely related average Vth values, Dit evaluation shows that for all channel orientations (0°, 30°, 60° and 90°), this high-index silicon (114) surface develops a high-quality interface with Si0 2 in which few electrons are trapped so that Dit as low as 10 1 0 cm-2 eV-1 can be obtained.
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