Two-dimensional simulations of parametric amplification of space charge waves in thin-film n-GaAs possessing negative differential conductivity

Grimalsky, V.; Garcia, A. Fuentes; Gutierrez, E.

doi:10.1109/iceee.2004.1433885

Cited by 4 publications

(2 citation statements)

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“…It is correct because in this frequency range we can obtain the amplification of space charge waves in a thin film of GaAs [11]. We can see the real and imaginary parts of k( ), longitudinal wave number with dependence of frequency for the three models.…”

Section: Comparison Between Tomizawa's Model Andmentioning

confidence: 75%

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Comparative Study of Two-Valley Models for Space Charge Wave Propagation in GaAs Semiconductor Films

Grimalsky

García-Barrientos

Gutirez-D

15th International Conference on Electronics, Communications and Computers (CONIELECOMP'05)

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A full comparative study of three models to describe the transport of carrier in GaAs is presented. these models were done by Tomizawa, Shur, and Rrodrigues, using the balance equations, where two-valley model in which only the -valley and the l-valleys were taken into account. these models have been used to describe the space charge wave propagation in thin n-GaAs films. it has been demonstrated that sometimes the models of Shur and Rodrigues may lead to incorrect results. Essential peculiarities of the Tomizawa's model has been put forward.

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Section: Comparison Between Tomizawa's Model Andmentioning

confidence: 75%

“…For GaAs L n n n (10) n v n v n v L L (11) where k B is Boltzmann's constant and T e is the electron temperature.…”

Section: Shur's Modelmentioning

confidence: 99%