Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300 °C

Molina, Joel; Valderrama, R.; Zúñiga, Carlos; Rosales, Pedro; Calleja, W.; Torres, Alfonso; Hidalga, Javier DeLa; Gutierrez, E.

doi:10.1016/j.microrel.2014.07.006

Cited by 25 publications

(20 citation statements)

References 18 publications

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“…Therefore, a higher voltage is required to conduct forming process in the MIS structure than in the MIM device. Also, it is known that the roughness of BE has a substantial effect on switching voltage [23]. The surface roughness of TiN BE should be much more uneven than that of Si-substrate BE since TiN was deposited by a physical vapor deposition (PVD) process.…”

Section: Introductionmentioning

confidence: 99%

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Kim¹,

Cho²,

Park³

2016

JSTS:Journal of Semiconductor Technology and Science

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Section: Introductionmentioning

confidence: 99%

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Kim¹,

Cho²,

Park³

2016

JSTS:Journal of Semiconductor Technology and Science

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“…The average roughness for this aluminum layer is 7.5 nm (which could be related to formation of stacking faults during evaporation of this metal) and since the physical thickness of Al 2 O 3 = 10 nm, reducing this severe surface roughness is critical in order to enhance the reproducibility of hysteretic -characteristics. Therefore, we could relate the observed variations in FORM , SET , and RESET of Figures 4(a)-4(b) to variations in the physical thickness of the effective oxide, since the roughness [22] at the metal/Al 2 O 3 interfaces is almost of the same physical thickness as observed after atomic-force microscopy. Figure 8 shows the power ( SET ⋅ SET ) needed to promote the HRS → LRS transitions already observed in Figure 6(b) versus the memory window ( ON / OFF ratios) therein obtained.…”

Section: Resultsmentioning

confidence: 90%

Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Molina

Hernandez-Martinez

2017

Complexity

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We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al 2 O 3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300 ∘ C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages ( FORM , SET , and RESET ) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic -measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the OFF / ON ratio is around 4-6 orders of magnitude and is formed at gate voltages of g < 4 V. In unipolar mode, a gradual reduction in SET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al 2 O 3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

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“…The physical property and smoothness of the electrodes is known to plays an important role in improving the performances of ReRAMs [41]. [41]. It was also reported that ReRAMs with superior surface morphology show a better on-off current ratio [42].…”

Section: Resultsmentioning

confidence: 99%

“…The variation of HRS and LRS during the cycling was much smaller for devices with the oxygen plasma treatment, and the memory window maintained consistently at 10 4 and 10 5 for the Al-top and Ag-top devices, respectively. The physical property and smoothness of the electrodes is known to plays an important role in improving the performances of ReRAMs [41]. [41].…”

Section: Resultsmentioning

confidence: 99%

High-Performance InGaZnO-Based ReRAMs

Liang

Wang

et al. 2019

IEEE Trans. Electron Devices

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Amorphous indium-gallium-zinc oxide (IGZO) is one of the most promising oxide semiconductors for thin-film transistors and it has started to replace amorphous silicon in display drivers. However, attempts to use IGZO in resistive random-access memories (ReRAMs) are still scarce. This work investigates the bipolar resistive switching properties of crossbar-ReRAM devices based on IGZO thin film. Aluminium bottom electrode and two different top electrodes (i.e. Al and Ag) were tested in the devices. It was discovered that an oxygen plasma treatment on the bottom electrode could significantly improve the surface roughness of the bottom electrode, the on/off ratio, and the switching uniformity. After the oxygen plasma treatment, the endurance of ReRAMs were enhanced. The on/off current ratios reached ~10 4 and 10 5 within 100 endurance cycles for Al and Ag top electrode devices, respectively. Furthermore, the ReRAMs memory window remained nearly constant during a retention test of 10 5 s. The conduction mechanisms of the two device structures were examined using Schottky emission and space-chargelimited-current pictures, and the memory effect was explained by the formation and the interruption of filaments.

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Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300 °C

Cited by 25 publications

References 18 publications

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

High-Performance InGaZnO-Based ReRAMs

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Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300 °C

Cited by 25 publications

References 18 publications

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

High-Performance InGaZnO-Based ReRAMs

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Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments