High-Performance InGaZnO-Based ReRAMs

Ma, Pengfei; Liang, Guangda; Wang, Yiming; Liu, Yunpeng; Xin, Qian; Song, Aimin

doi:10.1109/ted.2019.2912483

Cited by 20 publications

(19 citation statements)

References 49 publications

(64 reference statements)

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“…26 More recently, abrupt/filament-type switching (ARS) with positive SET and negative RESET bias conditions has been reported in contrast to the previous studies. 27 However, the values of voltages and currents involved in the two above-cited reports are comparable where the effect of the interface layer in the oxidized electrode was considered although with different explanations. Most of the reported literature on a-IGZO memristors exhibited abrupt (filament type) resistive switching, whereas mimicking human brain functionalities favours analog/gradual resistive switching.…”

Section: Introductionmentioning

confidence: 95%

Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

Haripriya¹,

Noh²,

Lee³

et al. 2023

Nanoscale

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Section: Introductionmentioning

confidence: 95%

Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

Haripriya¹,

Noh²,

Lee³

et al. 2023

Nanoscale

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“…36(d). The device's good performance and flexibility were attributed to the known properties of α-IGZO [245], [339], [340].…”

Section: Multifunction Of Zno Based Rram Devicesmentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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“…Oxidation and reduction reactions occur inside IGZO depending on the external bias, which changes the resistance of IGZO; thus, IGZO is used as a memory device by utilizing these characteristics [ 42 , 43 ]. In fact, there have already been studies on various memory devices using IGZO [ 44 , 45 , 46 , 47 , 48 , 49 ]. In particular, the p + Si-based IGZO memristors introduced in this paper show high retention and endurance characteristics.…”

Section: Introductionmentioning

confidence: 99%

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

et al. 2022

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In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO2/p+-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network.

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High-Performance InGaZnO-Based ReRAMs

Cited by 20 publications

References 49 publications

Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

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