Over the last couple of decades, the advancement in Microelectromechanical System (MEMS) devices is highly demanded for integrating the economically miniaturized sensors with fabricating technology. A sensor is a system that detects and responds to multiple physical inputs and converting them into analogue or digital forms. The sensor transforms these variations into a form which can be utilized as a marker to monitor the device variable. MEMS exhibits excellent feasibility in miniaturization sensors due to its small dimension, low power consumption, superior performance, and, batch-fabrication. This article presents the recent developments in standard actuation and sensing mechanisms that can serve MEMS-based devices, which is expected to revolutionize almost many product categories in the current era. The featured principles of actuating, sensing mechanisms and real-life applications have also been discussed. Proper understanding of the actuating and sensing mechanisms for the MEMS-based devices can play a vital role in effective selection for novel and complex application design.

This paper presents a bounded vibration energy harvester to effectively harvest energy from a wide band of low-frequency environmental vibrations ranging from 10 to 18 Hz. Rigid mechanical stoppers are used to confine the seismic mass movement within the elastic limits of the spring. Experimental results show the effectiveness of the proposed technique in increasing the efficiency of the energy harvester. When excited at a frequency of 10 Hz with a peak acceleration of 1 g, the harvester responds at a higher frequency of 20 Hz and gives a peak power of 2.68 mW and a peak to peak voltage of 2.62 V across a load of 220 Ω. The average power density of 65.74 μW cm−3 obtained at 10 Hz 1 g excitation monotonically increases with frequency up to 341.86 μW cm−3 at 18 Hz. An analytical model describing the nonlinear dynamics of the proposed harvester is also presented. A simple technique to estimate the energy losses during impact and thereof a method to incorporate these losses in the model are suggested. The presented model not only predicts the experimental voltage waveform and frequency response of the device with good similarity but also predicts the RMS voltage from the harvester for the whole range of operating frequencies with an RMS error of 5.2%.

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Field effect-based biosensors (BioFETs) stand out among other biosensing technologies due to their unique features such as real time screening, ultrasensitive detection, low cost, and amenability to extreme device miniaturization due to the convenient utilization of nanoscale materials. Nanodevices pave the way for the detection of tiny biomolecules and minute concentrations of analytes as they are ultrasensitive to surface charge modulation, allowing for better point-of-care screening of various life-threatening infectious diseases. Semiconducting carbon nanotubes (sc-CNTs) are exceptionally promising for FET-channel integration to replace bulky silicon technology beyond the dimensions of the short channel effects for their 1D ultrathin structure, superior electronic features, and biocompatibility. However, performance of CNTFET biosensors is influenced by the inhomogeneous interface between sc-CNTs and metallic source and drain electrodes. This article reviews recent studies on CNTFET biosensors, morphology of these devices and the cause-and-effect of the interface issues between sc-CNTs and metallic electrodes. Finally, future outlook on suggested technology to improve the performance of such CNTFET devices is presented. INDEX TERMS BioFETs, biomolecules, biosensors, carbon nanotubes, contact resistance, metal electrodes.

In recent years, active Radio Frequency Identification (RFID) tags have crossed into ultra low power domain. With obvious advantages over passive tags, a setback for active tag growth is the need for battery replacement and limited operational life. Battery life could be extended by scavenging surrounding Wi-Fi signals using rectenna architecture which consists of a receiving antenna attached to a rectifying circuit. A seven stage Cockroft-Walton voltage multiplier optimized for low input power (below 0 dBm) is proposed. Prototype was fabricated on RT/Duroid 5880 (RO5880) printed circuit board (PCB) substrate with dielectric constant and loss tangent of 2.2 and 0.0009 respectively. Experimental results show that 2 V output voltage can be harvested from an operating frequency of 2.48 GHz with −9 dBm (0.13 mW) sensitivity with 1.57 mm board thickness.

This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.

Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.