Exceptional advancement has been made in the development of graphene optical nanoantennas. They are incorporated with optoelectronic devices for plasmonics application and have been an active research area across the globe. The interest in graphene plasmonic devices is driven by the different applications they have empowered, such as ultrafast nanodevices, photodetection, energy harvesting, biosensing, biomedical imaging and high-speed terahertz communications. In this article, the aim is to provide a detailed review of the essential explanation behind graphene nanoantennas experimental proofs for the developments of graphene-based plasmonics antennas, achieving enhanced light–matter interaction by exploiting graphene material conductivity and optical properties. First, the fundamental graphene nanoantennas and their tunable resonant behavior over THz frequencies are summarized. Furthermore, incorporating graphene–metal hybrid antennas with optoelectronic devices can prompt the acknowledgment of multi-platforms for photonics. More interestingly, various technical methods are critically studied for frequency tuning and active modulation of optical characteristics, through in situ modulations by applying an external electric field. Second, the various methods for radiation beam scanning and beam reconfigurability are discussed through reflectarray and leaky-wave graphene antennas. In particular, numerous graphene antenna photodetectors and graphene rectennas for energy harvesting are studied by giving a critical evaluation of antenna performances, enhanced photodetection, energy conversion efficiency and the significant problems that remain to be addressed. Finally, the potential developments in the synthesis of graphene material and technological methods involved in the fabrication of graphene–metal nanoantennas are discussed.

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Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.

Surface-emitting diode lasers containing a second-order Bragg grating with a central phaseshift, Δφ, of values around π are found to fundamentally favor lasing in a mode of symmetric near-field amplitude profile, which in turn provides emission in a single-lobed beam orthonormal to the surface. Devices of 500 μm long distributed-feedback (DFB) active region (λ=0.98 μm) and 500 μm long distributed feedback reflector passive regions provide, for Δφ=π, a surface-emitted beam pattern with 88% central-lobe power content, and external differential quantum efficiency, ηD, of 51%. Since the guided field is antisymmetric to start with, and a central π phaseshift causes two grating-outcoupled beams to be out-of-phase with each other, the net result is a single-lobed far-field pattern. The guided-field peak-to-valley (intensity) ratio, R, in the active (i.e., DFB) region is only 2, which insures single-mode operation to high powers, since the intermodal discrimination is high (⩾100 cm−1). Over a wide range in Δφ:60°; ηD remains high (>50%) and the degree of guided-field uniformity remains low (R<2).

A tin oxide (SnO2) and reduced graphene oxide (rGO) hybrid composite gas sensor for high-performance carbon dioxide (CO2) gas detection at room temperature was studied. Since it can be used independently from a heater, it emerges as a promising candidate for reducing the complexity of device circuitry, packaging size, and fabrication cost; furthermore, it favors integration into portable devices with a low energy density battery. In this study, SnO2-rGO was prepared via an in-situ chemical reduction route. Dedicated material characterization techniques including field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray (EDX) spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) were conducted. The gas sensor based on the synthesized hybrid composite was successfully tested over a wide range of carbon dioxide concentrations where it exhibited excellent response magnitudes, good linearity, and low detection limit. The synergistic effect can explain the obtained hybrid gas sensor’s prominent sensing properties between SnO2 and rGO that provide excellent charge transport capability and an abundance of sensing sites.

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

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