Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12-200 mPa) and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C 3 H 8 , CH 4 , Si(CH 3 ) 2 Cl 2 , H 2 ), the voltage of accelerating gap in the range 0.5-5 kV, and the substrate temperature in the range 20-850 ∘ C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials.

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