A stabilized interferometric displacement measurement system, which is suitable for on-line measurement and is endowed with large measurement range and high resolution, is proposed. The system is stabilized by a feedback loop which compensates the influences induced by the environmental disturbances and makes the system stabile enough for on-line measurement. Two different wavelengths are working simultaneously in the system. The measurement range which is determined by the synthetic-wavelength interferometric signal is expanded to the order of millimeter, while the measurement resolution which is determined by one of the single-wavelength interferometric signal is the order of sub-nanometer.
A tool system integrated with machining and measurement is constructed by using thin film strain sensors and tool integration technology, which provides a new research method for studying the machining mechanism and automatic monitoring of the machining process. In this paper, three kinds—elastic sleeve type, fast insert type, and insert type—of tool cutting force measurement systems of the turning tool embedded with thin-film micro-sensors are designed. High strain sensitivity can be obtained through setting the elastic region of the tool bar on the premise of meeting the tool strength and stiffness. The system can realize integration between the thin-film strain sensor and tool bar quickly and efficiently. It is simplified as a cantilever beam structure for analysis after setting the shape of the sensor elastic substrate as a rectangle. The expression between strain and deflection of the elastic substrate is established when the free end is subjected to tangential force and bending moment, and the influence of the substrate’s structural parameters on the deflection is analyzed. In order to further improve the strain effect, six kinds of other shapes of the substrate structure are optimized, deducing the expression between the structure parameters and deflection; the corresponding substrate structure atlas is established, comparing and analyzing the deflection of the rectangular structure substrate. Five kinds of metal substrate materials are selected. In the functional film system of the thin-film strain sensor, the scheme of aluminum oxide and titanium nitride as the transition layer, silicon nitride as the insulating layer, and Ni–Cr alloy as the resistance grid layer is adopted. The research results show that this scheme can improve the adhesion between the insulating layer and the substrate, improve the resistance sensitivity coefficient of the sensor, and meet the application requirements of the cutting force measurement system.
The thin-film strain sensor is a cutting-force sensor that can be integrated with cutting tools. The quality of the alloy film strain layer resistance grid plays an important role in the performance of the sensor. In this paper, the two film patterning processes of photolithography magnetron sputtering and photolithography ion beam etching are compared, and the effects of the geometric size of the thin-film resistance grid on the resistance value and resistance strain coefficient of the thin film are compared and analyzed. Through orthogonal experiments of incident angle, argon flow rate, and substrate negative bias in the ion beam etching process parameters, the effects of the process parameters on photoresist stripping quality, etching rate, surface roughness, and resistivity are discussed. The effects of process parameters on etching rate, surface roughness, and resistivity are analyzed by the range method. The effect of substrate temperature on the preparation of Ni Cr alloy films is observed by scanning electron microscope. The surface morphology of the films before and after ion beam etching is observed by atomic force microscope. The influence of the lithography process on the surface quality of the film is discussed, and the etching process parameters are optimized.
Thin-film strain sensors are widely used because of their small volume, fast strain response and high measurement accuracy. Among them, the thin-film material and preparation process of thin-film strain sensors for force measurement are important aspects. In this paper, the preparation process parameters of the transition layer, insulating layer and Ni-Cr alloy layer in a thin-film strain sensor are analyzed and optimized, and the influence of each process parameter on the properties of the thin film are discussed. The surface microstructure of the insulating layer with Al2O3 or Si3N4 transition layers and the film without transition layer were observed by atomic force microscopy. It is analyzed that adding a transition layer between the stainless steel substrate and insulation layer can improve the adhesion and flatness of the insulation layer. The effects of process parameters on elastic modulus, nanohardness and strain sensitivity coefficient of the Ni-Cr resistance layer are discussed, and electrical parameters such as the resistance strain coefficient are analyzed and characterized. The static calibration of the thin-film strain sensor is carried out, and the relationship between the strain value and the output voltage is obtained. The results show that the thin-film strain sensor can obtain the strain generated by the cutting tool and transform it into an electrical signal with good linearity through the bridge, accurately measuring the cutting force.
In order to reduce the resistance value of the sputtering thin film resistor grid and improve the adhesion of the film, a thin film sensor with the NiCr film as a sensitive layer on a 304 stainless steel substrate is annealed in the N2 environment. During the experiment, it is found that the different annealing temperatures (300 °C, 350 °C, 400 °C, 450 °C, and 500 °C) can effectively reduce the resistance value of the thin film resistor grid; the decrease is the largest at 450 °C, and the resistance value change is 1.77 kΩ. The small resistance value enables the thin film sensor to detect smaller strain and has higher measurement accuracy. The thin film has the strongest adhesion on the substrate at 350 °C and 30 min, which is about 37.5% higher than that of the sputtering state. The increase in adhesion makes the thin film less likely to crack and fall off prematurely, which can expand the measuring force range. In addition, the atomic force microscopy results demonstrate that the thin film annealed at a higher annealing temperature has higher surface roughness, which may be caused by the phenomenon of original grain clusters after annealing. In addition, the temperature coefficient of resistance value and strain sensitivity coefficient (kn) increase with the increase in the annealing temperature, with kn increasing only slightly.
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