The thin-film strain sensor is a cutting-force sensor that can be integrated with cutting tools. The quality of the alloy film strain layer resistance grid plays an important role in the performance of the sensor. In this paper, the two film patterning processes of photolithography magnetron sputtering and photolithography ion beam etching are compared, and the effects of the geometric size of the thin-film resistance grid on the resistance value and resistance strain coefficient of the thin film are compared and analyzed. Through orthogonal experiments of incident angle, argon flow rate, and substrate negative bias in the ion beam etching process parameters, the effects of the process parameters on photoresist stripping quality, etching rate, surface roughness, and resistivity are discussed. The effects of process parameters on etching rate, surface roughness, and resistivity are analyzed by the range method. The effect of substrate temperature on the preparation of Ni Cr alloy films is observed by scanning electron microscope. The surface morphology of the films before and after ion beam etching is observed by atomic force microscope. The influence of the lithography process on the surface quality of the film is discussed, and the etching process parameters are optimized.
A thin-film strain micro-sensor is a cutting force sensor that can be integrated with tools. Its elastic substrate is an important intermediate to transfer the strain generated by the tools during cutting to the resistance-grid-sensitive layer. In this paper, 1060 aluminum is selected as the elastic substrate material and aluminum oxide thin film is selected as the transition layer between the aluminum substrate and the silicon nitride insulating layer. The Stoney correction formula applicable to the residual stress of the aluminum oxide film is derived, and the residual stress of the aluminum oxide film on the aluminum substrate is obtained. The influence of Sputtering pressure, argon flow and negative substrate bias process parameters on the surface quality and sputtering power of the aluminum oxide thin film is discussed. The relationship model between process parameters, surface roughness, and sputtering rate of thin films is established. The sputtering process parameters for preparing an aluminum oxide thin film are optimized. The micro-surface quality of the aluminum oxide thin film obtained before and after the optimization of the process parameters and the surface quality of Si3N4 thin film sputtered on alumina thin film before and after the optimization are compared. It is verified that the optimized process parameters of aluminum oxide film as a transition layer can improve the adhesion between the insulating-layer silicon nitride film and the aluminum substrate.
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