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A novel 1-level interconnection/transition method for radio frequency micro-electronic-mechanic system (RF MEMS) devices is proposed in this paper. Using bumping-bridge structure which is composed of a chip substrate, a coplanar waveguide (CPW) transmission line fabricated on the substrate and a group of metal bumps set on the ends of the CPW line, this method combines the advantages of both flip-chip and throughsilicon via (TSV) techniques. The results of the finite element method (FEM) analysis show that this interconnection/ transition structure has good characteristics of return loss and insertion loss over a broad frequency range compared with both TSV and wire-bonding structures.

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With the growing of the applications of surface acoustic wave (SAW) devices, the requirement for the accuracy of the operating frequency of the SAW devices is constantly strengthened. The impact of thermal strain on the characteristics of SAW devices cannot be ignored, which induced in their packaging process. In this paper, by using the finite element method (FEM) software, the thermal strain induced in the F-11 package structure of a SAW device is analyzed. An approach to reduce the thermal strain induced in the device chip by setting a ring configuration around it is explored. And the effects of various ring structures with different materials, thicknesses, widths and other parameters for reducing the thermal strain on the chip surface are analyzed and compared. Keywords-SAW; packaging effect; thermal strain; finite element methodI.