This letter presents a fully integrated Class-J GaN MMIC power amplifier (PA), which is fabricated in Woolfspeed 0.25 um GaN-on-SiC technology. This PA is the first published design for the emerging IEEE 802.11ax application in literature. When tested with 80MHz 256-QAM 802.11ax signal with 11.25 dB peak-to-average power ratio (PAPR), the PA delivers average output power of 27.3 to 30.3 dBm from 4.9 to 5.9 GHz, with power-added efficiency (PAE) of 16.7% to 27.3%, while meeting the standard specification of error vector magnitude (EVM) below -32 dB.
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