A Fully Integrated Class-J GaN MMIC Power Amplifier for 5-GHz WLAN 802.11ax Application

Liu, Bei; Mao, Mengda; Boon, Chirn Chye; Choi, Pilsoon; Khanna, Devrishi; Fitzgerald, Eugene A.

doi:10.1109/lmwc.2018.2811338

Cited by 48 publications

(17 citation statements)

References 10 publications

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“…It degrades the output power. The design of GaN-based fully integrated Class-J PA for 5GHz WLAN 802.11ax systems is presented in [17]. The performance of this PA can be enhanced further by employing DPD.…”

Section: Brief Review Of Switching Mode Pas and Theory Of Class-j Power Amplifiermentioning

confidence: 99%

A Low power, Highly Efficient, Linear, Enhanced wideband Class-J mode Power Amplifier for 5G Applications

Sridhar¹,

Senthilpari²,

Mardeni³

et al. 2021

Preprint

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In wireless communication networks, the necessity for high-speed data rates has increased in emerging 5G application areas. The existing Power amplifier (PA) topologies reported to date demonstrated their potential in achieving desired Power Added Efficiency (PAE) and linearity with the aid of different efficiency enhancement and linearization techniques. However, these harmonically tuned switching power amplifiers are restricted to narrow bandwidth, which makes them less appealing for broadband applications. Therefore, the challenge of designing a power amplifier with improved efficiency by maintaining linearity for a dynamic range of bandwidth becomes increasingly critical for PA designers. Recently developed class-J PA topology has proven its potential to obtain good efficiency while maintaining the linearity for wide bandwidth applications. This research work presents a methodology to design a 5 GHz Class-J mode PA topology using Silterra 0.13-µm CMOS technology. This research's main objectives are to determine the Ropt of the transistor and design a proper Output Matching Network (OMN) to obtain Class-J PA operation to make it suitable for 5G wireless applications. The simulation results represent that the proposed Class-J PA provides 27 dBm of maximum power output along with a maximum large-signal power gain of 13.8 dB and the small-signal gain of 17dB for a band with more than 500MHz with a 5V power supply into a 50- Ω load.

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Section: Brief Review Of Switching Mode Pas and Theory Of Class-j Power Amplifiermentioning

confidence: 99%

A Low power, Highly Efficient, Linear, Enhanced wideband Class-J mode Power Amplifier for 5G Applications

Sridhar¹,

Senthilpari²,

Mardeni³

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…The Cripps load-line method, known as R opt = 2(V DD − V knee )/I max , is commonly used in Class J and continuous class B power amplifier designs [5]. The R opt obtained using this method is chosen for maximum output power.…”

Section: The Choice Of R Opt For Efficiency Enhancementmentioning

confidence: 99%

“…Traditional harmonic-controlled high-efficiency PAs such as Class F [2,3] and Class J [4,5] modes are limited in bandwidth, due to the difficulty of realizing the required harmonic impedances over a wide bandwidth. Based on the bandwidth limitation of traditional harmonic-controlled PAs, Cripps proposed the continuous class B mode PA according to the method of waveform engineering [6].…”

Section: Introductionmentioning

confidence: 99%

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Jin

Gao²,

Chen

et al. 2019

Electronics

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This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 µm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51-59% PAE (Power Added Efficiency) and 19.8-21.2 dB power gain with a saturated power of 40.8-42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm 2 .

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“…However, with the rapid development of semiconductor materials and processes, monolithic microwave integrated circuits (MMICs) are becoming ever more popular. MMICs have the advantages of small size, superior performance, high bandwidth, and easy impedance matching, and are now widely used in engineering design [ 23 ]. In order to obtain a modulation signal, we selected an InGaP heterojunction bipolar transistor (HBT) MMIC chip and designed a wideband LNA to amplify the output signal of the D-dot antenna and generate a modulation signal for the electro-optic conversion circuit.…”

Section: Design Of the Sensormentioning

confidence: 99%

Design of Wideband GHz Electric Field Sensor Integrated with Optical Fiber Transmission Link for Electromagnetic Pulse Signal Measurement

Zhang

et al. 2018

Sensors

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The detection of high frequency overvoltage and partial discharge is of great significance in evaluating the insulation condition of high-voltage power equipment. A wideband GHz electric field (E-field) sensor for electromagnetic pulse (EMP) signal measurement was proposed in this paper. An optical fiber transmission link was adopted in the design in order to implement high-voltage isolation and reduce electromagnetic interference during transmission. The designed sensor was mainly made up of a differential electric field (D-dot) antenna, transmitter, and receiver. The D-dot antenna was designed to detect high frequency E-field strength and generate a corresponding voltage signal, which was converted into an optical signal by the transmitter. The optical signal could be transmitted a large distance through an optical fiber without electromagnetic interference and changed back to a voltage signal again by a receiver. The design process of the sensor was introduced in detail, and experiments were performed using a gigahertz transverse electromagnetic (GTEM) cell and an EMP simulator to verify it. The results indicated that the designed sensor had a good performance besides an expectable delay due to the optional amplifier.

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A Fully Integrated Class-J GaN MMIC Power Amplifier for 5-GHz WLAN 802.11ax Application

Cited by 48 publications

References 10 publications

A Low power, Highly Efficient, Linear, Enhanced wideband Class-J mode Power Amplifier for 5G Applications

A Low power, Highly Efficient, Linear, Enhanced wideband Class-J mode Power Amplifier for 5G Applications

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Design of Wideband GHz Electric Field Sensor Integrated with Optical Fiber Transmission Link for Electromagnetic Pulse Signal Measurement

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