High efficiency surface grating couplers for silicon nitride waveguides have been designed, fabricated, and characterized. Coupling efficiencies exceeding 60 % are reported at a wavelength of 1.31 mum, as well as angular and wavelength -3 dB tolerances of 4 degrees and 50 nm, respectively. When the wavelength is increased from 1310 nm to 1450 nm the coupling efficiency progressively decreases but remains above 20 % at 1450 nm. The influence of the duty ratio of the grating has also been investigated: maximum coupling efficiency was obtained at 50 % duty ratio.
Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of dissimilar semiconductor materials. Among the types of wafer bonding, perhaps the most flexible is that which employs free-standing III–V films as created by epitaxial liftoff. For some purposes, weak Van der Waals forces provide an adequate bond between the native oxides of the III–V film and its new substrate. If the substrate is coated by palladium however, a low temperature solid-phase-topotaxial reaction occurs, producing oriented Pd4GaAs under the GaAs film. In effect, the topotaxy comes about through mechanical contact alone. The resulting metallurgical bond is an ohmic contact, a thermal contact and a robust, permanent, adherent contact.
This article describes the first demonstration of ring resonators based on vertical multiple-slot silicon nitride waveguides. The design, fabrication and measurement of multiple-slot waveguide ring resonators with several coupling distances and ring radii (70 microm, 90 microm and 110 microm) have been carried out for TE and TM polarizations at the wavelength of 1.3 microm. Quality factors of 6,100 and 16,000 have been achieved for TE and TM polarization, respectively.
In this work anisotropic porous silicon is investigated as a material for optical sensing. Birefringence and sensitivity of the anisotropic porous silicon membranes are thoroughly studied in the framework of Bruggeman model which is extended to incorporate the influence of environment effects, such as silicon oxidation. The membranes were also characterized optically demonstrating sensitivity as high as 1245 nm/RIU at 1500 nm. This experimental value only agrees with the theory when it takes into consideration the effect of silicon oxidation. Furthermore we demonstrate that oxidized porous silicon membranes have optical parameters with long term stability. Finally, we developed a new model to determine the contribution of the main depolarization sources to the overall depolarization process, and how it influences the measured spectra and the resolution of birefringence measurements.
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