Proposed is the use of Hydrogen Peroxide (H2O2) as the ideal oxidant for atomic layer deposition of metal oxide films. H2O2 has similar oxidation properties to Ozone while simultaneously having slightly stronger proton transfer properties than water. Vital to the success of any vapor phase chemistry is delivery of stable compositions, temperature and pressure. This study demonstrates the viability of a new membrane technology for the precise delivery of H2O2/ H2O mixtures starting from a liquid range of 30-70%. An in-situ gas phase cleaning process to remove carbon contamination from Ge(100) surfaces using gas phase H2O2 has been characterized.
The use of a heavier noble gas such as Kr in atomic layer annealing results in higher crystallinity due to higher momentum transfer leading to a more localized and intense surface heating effect occurring over picosecond timescales.
High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material causing a major concern for both the performance and the reliability of these new devices. Novel "dry" cleaning and surface preparation methods are now being sought, where the term "dry" refers to gas phase or vapor chemistries. Our approach entails the development of hydrogen peroxide (H2O2) vapor phase chemistries, where H2O2/water mixtures are delivered and removed in gas phase.
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