Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components in industrial-scale flexible devices and building blocks of two-dimensional (2D) van der Waals heterostructures. However, their mechanical and elastic properties have not been fully characterized. Here we report high 2D elastic moduli of CVD monolayer MoS2 and WS2 (∼170 N/m), which is very close to the value of exfoliated MoS2 monolayers and almost half the value of the strongest material, graphene. The 2D moduli of their bilayer heterostructures are lower than the sum of 2D modulus of each layer but comparable to the corresponding bilayer homostructure, implying similar interactions between the hetero monolayers as between homo monolayers. These results not only provide deep insight into understanding interlayer interactions in 2D van der Waals structures but also potentially allow engineering of their elastic properties as desired.

Interactions between metal and atomically thin two-dimensional (2D) materials can exhibit interesting physical behaviors that are of both fundamental interests and technological importance. In addition to forming a metal–semiconductor Schottky junction that is critical for electrical transport, metal deposited on 2D layered materials can also generate a local mechanical strain. We investigate the local strain at the boundaries between metal (Ag, Au) nanoparticles and MX2 (M = Mo, W; X = S) layers by exploiting the strong local field enhancement at the boundary in surface plasmon-enhanced Raman scattering (SERS). We show that the local mechanical strain splits both the in-plane vibration mode E2g(1) and the out-of-plane vibration mode A1g in monolayer MoS2, and activates the in-plane mode E1g that is normally forbidden in backscattering Raman process. In comparison, the effects of mechanical strain in thicker MoS2 layers are significantly weaker. We also observe that photoluminescence from the indirect bandgap transition (when the number of layers is ≥2) is quenched with the metal deposition, while a softened and broadened shoulder peak emerges close to the original direct-bandgap transition because of the mechanical strain. The strain at metal–MX2 boundaries, which locally modifies the electronic and phonon structures of MX2, can have important effects on electrical transport through the metal–MX2 contact.

No abstract

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoOx capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g−1 for flexible TMD (WSe2) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g−1, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

No abstract