New vaporization sources for H2O2 for pre-treatment/cleaning of ALD deposition surfaces

Abstract

High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material causing a major concern for both the performance and the reliability of these new devices. Novel "dry" cleaning and surface preparation methods are now being sought, where the term "dry" refers to gas phase or vapor chemistries. Our approach entails the development of hydrogen peroxide (H2O2) vapor phase chemistries, where H2O2/water mixtures are delivered and removed in gas phase.