Enabling low temperature metal nitride ALD using ultra-high purity hydrazine: ET/ID: Enabling technologies and innovative devices

Alvarez, Dan; Spiegelman, Jeffrey; Andachi, Keisuke; Holmes, Russell J.; Raynor, Mark W.; Shimizu, Hank

doi:10.1109/asmc.2017.7969274

Cited by 4 publications

(6 citation statements)

References 4 publications

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“…One is a trend toward bulk synthesis without control of μ(N) using pressure. Given the importance of μ(N) in controlling nitride formation, various approaches are gaining traction in basic research, such as the use of reactive fluxes and metathesis [e.g., carbodiimides (162,163) and amides (164)], as well as the use of reactive gases outside traditional thin-film deposition chambers [e.g., N 2 H 4 -based atomic layer deposition (165) or N 2 -based plasma (12,166)]. Another is the specific selection of substrates in order to stabilize metastable phases during deposition, an exciting possibility given the opportunities for heteroepitaxial integration discussed above.…”

Section: Challenges and Promise In Ternary Nitride Synthesismentioning

confidence: 99%

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Greenaway

Melamed

Tellekamp

et al. 2021

Annu. Rev. Mater. Res.

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Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diverse chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N2, the number of predicted nitride compounds dwarfs the number that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise. Expected final online publication date for the Annual Review of Materials Science, Volume 51 is August 2021. Please see http://www.annualreviews.org/page/journal/pubdates for revised estimates.

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Section: Challenges and Promise In Ternary Nitride Synthesismentioning

confidence: 99%

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Greenaway

Melamed

Tellekamp

et al. 2021

Annu. Rev. Mater. Res.

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“…The molecular structure of N2H4 is as shown in Figure 1 using a ball-stick model. Safety was a key concern while handling N2H4, but the newly available ultrahigh purity anhydrous N2H4 source is compliant with the safety standard requirements and has also demonstrated the deposition of metal nitrides at low temperatures [10][11][12]. Abdulagatov et al recently demonstrated AlN deposition by thermal ALD using tris(diethylamido)aluminum (III) (TDEAA) and hydrazine in the deposition temperature range from 150 to 280 °C [13].…”

Section: Introductionmentioning

confidence: 99%

“…The molecular structure of N 2 H 4 is as shown in Figure 1 using a ball-stick model. Safety was a key concern while handling N 2 H 4 , but the newly available ultra-high purity anhydrous N 2 H 4 source is compliant with the safety standard requirements and has also demonstrated the deposition of metal nitrides at low temperatures [ 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

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“…Where there are challenges, there is also opportunity, and we therefore highlight some developing fields for ternary nitride synthesis. The first is a trend toward bulk synthesis without control of µ(N) using pressure: given the importance of µ(N) in controlling nitride formation, various approaches are gaining traction in basic research, such as the use of reactive fluxes and metathesis (e.g., carbodiimides (161,162) and amides ( 163)), as well as the use of reactive gases outside of traditional thin-film deposition chambers (e.g., N 2 H 4based atomic layer deposition (164) or N 2 -based plasma (12,165)). Another is the specific selection of substrates in order to stabilize metastable phases during deposition, an exciting possibility given the opportunities for heteroepitaxial integration discussed above.…”

Section: Challenges and Promise In Ternary Nitride Synthesismentioning

confidence: 99%

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Greenaway,

Melamed,

Tellekamp

et al. 2020

Preprint

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Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N 2 , the number of predicted nitride compounds dwarfs those that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise.

show abstract

Enabling low temperature metal nitride ALD using ultra-high purity hydrazine: ET/ID: Enabling technologies and innovative devices

Cited by 4 publications

References 4 publications

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

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