Simultaneously increased current density and open circuit voltage were achieved through doping F4-TCNQ into PEDOT:PSS in inverted perovskite solar cells.

PSS based device.

Perovskite film generally has rough surface morphology due to the voids between the grain domains. Smoothed interface contact between the perovskite layer and the top electrode is critical for planar perovskite solar cells. We reported high efficiency bromine-iodine based perovskite solar cells with a flattening cathode interface by incorporating a solution-processed bathocuproine (sBCP) interfacial layer at the cathode side. Compared with vacuum evaporated bathocuproine (eBCP), sBCP demonstrated an excellent surface modification effect at the cathode side with very smaller charge transfer resistance. Accordingly, a high fill factor exceeding 85% and a power conversion efficiency exceeding 13% in CH3NH3PbI3-xBrx based perovskite solar cells were achieved. The largely improved fill factor was attributed to the smooth film morphology and full surface coverage of perovskite films modified by the solution-processed BCP layer.

In this work, NH2CH=NH2PbI3 (FAPbI3) was employed for light harvesting in inverted planer perovskite solar cells for the first time. Except for the silver cathode, all layers were solution-processed under or below 140 °C. The effect of the annealing process on device performance was investigated. The FAPbI3 solar cells based on a slowed-down annealing shows superior performance compared to the CH3NH3PbI3 (MAPbI3)-based devices, especially for the short circuit current density. A power conversion efficiency of 13.56% was obtained with high short circuit current density of 21.48 mA cm(-2). This work paves the way for low-temperature fabrication of efficient inverted planer structure FAPbI3 perovskite solar cells.

The authors investigate the influence of two hole interfacial materials poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) and aqueous solution-processed MoO3 (sMoO3) on cell stability. sMoO3-based device demonstrated obviously improved stability compared to PEDOT:PSS-based one. Current-voltage characteristics analysis is carried out to investigate the effect of the hole interfacial layers on the cell stability. The formation of additional trap states at the interfaces between the hole interfacial layer and the active layer in degraded devices is verified by a differential method. Improved cell stability is attributed to a relatively stable sMoO3 interfacial layer compared to PEDOT:PSS by comparing their different trap states distributions.

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The authors investigate the cathode interface effects in polymer/fullerene based solar cell by using LiF, Liq and/or Bphen as the interfacial layers. Enhanced carrier extracting is observed by using Liq as the electron transport layer. A maximum power conversion efficiency of 3.75% is obtained in the case of Liq, presenting a 14% enhancement compared with the device with LiF as the electron transport layer. A detailed analysis of the capacitance as function of frequency and bias yields information about interfacial charges transport as well as the extraction and accumulation of charges is carried out. Cole-Cole impedance plots illustrate the interfacial resistance of different cathode buffer layer based device. The device shows good charge transport and the photo-generated changes could be effectively collected by the electrode and less charge accumulation when Liq is uswed as the cathode buffer layer.