Both broadband and narrowband organic photodetectors can be realized due to the easily tunable optical/electronic properties of organic semiconductors.

Block copolymers (BCP) can self-assemble into nanoscale patterns with a wide variety of applications in the semiconductor industry. The self-assembly of BCPs is commonly accomplished by solvent vapor or thermal annealing, but generally these methods require long time (few hours) to obtain nanostructured thin films. In this contribution, a new and ultrafast method (using microwaves) is proposed-high temperature solvent vapor annealing (HTSVA), combining solvent vapor annealing with thermal annealing, to achieve fast and controllable self-assembly of amphiphilic BCP thin films. A promising carbohydrate-based BCP capable of forming cylindrical patterns with some of the smallest feature sizes is used for demonstrating how to obtain a highly ordered vertical cylindrical pattern with sub-10 nm feature sizes in few seconds by HTSVA. HTSVA provides not only a simple way to achieve BCP fast self-assembly in practical applications but also a tool to study the self-assembly behavior of BCPs under extreme conditions.

An excellent PCE of 13.8% was achieved for low-temperature processed CsPbI2Br PSCs using a hot-casting method with precisely controlled substrate temperature.

Ultraviolet (UV) organic optoelectronic devices have been attracting extensive research owing to their great potential in a variety of applications such as biological and chemical sensing, excitation lighting source, high-density...

Improved efficiency and stability of the organic solar cells (OSCs) are the critical considerations for practical applications. The interface between the interlayer and bulk heterojunction has recently been shown as one of the weak links associated with the degradation in the nonfullerene acceptor (NFA)based OSCs. It shows that the removal of the interfacial chemical reactions between the 2-(3-oxo-2,3-dihydroinden-1-ylidene)malononitrile (INCN) moieties in NFA and poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) hole extraction layer (HEL) is desired for enhancing the device stability. In this work, we show that the use of a bilayer MoO 3 /antimonene HEL favors the operational stability in OSCs through maintaining a high builtin potential and suppression of an undesired interfacial reaction between INCN moieties in NFA and the PEDOT structures in PEDOT:PSS. A power conversion efficiency of 16.68% is also obtained for the OSCs with a bilayer MoO 3 /antimonene HEL, prepared using a blend system of PM6:Y6, demonstrating its suitability for high-performance OSCs.

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