Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at high-index-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2). This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.

The junction boosts the function: With a combination of surface‐sensitive techniques, the photocatalytic activity of TiO2 was found to be directly related to the surface‐phase structure, and can be greatly enhanced when anatase TiO2 nanoparticles are highly dispersed on the surface of rutile TiO2 to form anatase–rutile surface‐phase junctions (see picture for calcination progression).

We propose an active plasmonic device based on graphene. Highly confined plasmonic waves in monolayer graphene are efficiently excited using an etched diffractive grating on silicon. The guided-wave resonance of the combined structure creates a sharp notch on the normal-incidence transmission spectra, as the incident optical wave couples to the graphene plasmonic wave. This structure can be used as a highly tunable optical filter or a broad-band modulator because the resonant wavelength can be quickly tuned over a wide wavelength range by a small change in the Fermi energy level of the graphene. In this paper, we analyze the performance of this device with finite-difference time-domain simulations. We compare the proposed structure with recently demonstrated graphene nanoribbons based on bound plasmonic oscillations.