BSIM3 [4] with respect to its suitability for highfrequency circuit design using a 0.5pm CMOS process*
AbstractThe evaluation of MOS compact models, focusing
MOS Compact Modeling Issues for RFon BSIM3v3, is performed with specific development described toward scalable RF libraries suitable for high-frequency mixed-signal circuit design. Additional Application parasitic elements are added to the compact model to better describe its operation at higher frequency. This extrinsic subcircuit includes the gate resistance and complex substrate admittance which are scalable and physically based, and a detailed parameter extraction procedure for each is described. Small-signal yparameters and noise behavior of the extended model are used to verify the match to high-frequency onwafer measurements.
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