Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data

Pehlke, D.R.; Pavlidis, D.

doi:10.1109/22.179903

Cited by 115 publications

(25 citation statements)

References 4 publications

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“…Thus numerous applications of photonic crystals have been proposed for improving the performance of devices with operating frequencies ranging from the microwave to optical, including zero-threshold lasers, novel resonators and cavities, and efficient microwave antennas [2,3]. Although the use of photonic crystals made of dielectric materials has been successful in various applications, some properties restrict usage.…”

Section: Introductionmentioning

confidence: 99%

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An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT

Chen

Huang

et al. 2005

Microw. Opt. Technol. Lett.

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Section: Introductionmentioning

confidence: 99%

“…In recent years, much effort has been devoted to analytical approaches of HBT equivalent-circuit parameter extraction [1][2][3][4][5][6]. Many closed-form representations of intrinsic circuit elements have been derived for direct extraction of equivalent-circuit elements [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT

Chen

Huang

et al. 2005

Microw. Opt. Technol. Lett.

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“…In this paper, we address the modeling of HBT, a device which demonstrated significantly improved microwave and RF performance. Researchers have proposed HBT model parameter extraction techniques such as analytical methods [4] [5] and Monte Carlo methods [6]. This paper describes a novel neural network HBT modeling technique.…”

Section: Introductionmentioning

confidence: 99%

A Neural Network Approach to the Modeling of Heterojunction Bipolar Transistors from S-Parameter Data

Devabhaktuni

Zhang

1998

28th European Microwave Conference, 1998

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Artificial neural networks have gained attention as a fast, efficient, flexible and accurate tool in the areas of microwave modeling, simulation and optimization. In this paper, a novel neural network approach is proposed for the modeling of Heterojunction Bipolar Transistors (HBT) directly from their S-Parameter data. The neural network structure incorporates bias current and bias voltage as inputs. This enables us to use the same neural model under different bias conditions. The proposed technique provides reliable neural transistor models, while significantly reducing the cost effort and complexity involved in the modeling ofHBT.

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“…A physical small signal model was extracted from cold and hot S-parameter measurements [8]. Moreover DC and multi-bias S-parameter data were used to model the transistor under large-signal operation [9].…”

Section: Design Of the Transimpedance Amplifiermentioning

confidence: 99%

High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

Mohammadi

Park²,

Pavlidis³

et al.

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

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A self-aligned GaInF'/GaAs HBT technology was used to develop a monolithic high-gain transimpedance amplifier suitable for optical communication receivers. On-wafer probe measurements revealed a gain (SZJ of 18.8 dB with a bandwidth of 13.5 GHz and input, output matching better than -8 dB. The am lifier showed a sensitivity of -15 dBm for 10 Gb/s NRZ 2 -1 pseudo-random bit sequence with a BER ofThe noise figure of the amplifier was better than 7.5 dB over the bandwidth of operation.

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Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data

Cited by 115 publications

References 4 publications

An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT

An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT

A Neural Network Approach to the Modeling of Heterojunction Bipolar Transistors from S-Parameter Data

High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

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