28th European Microwave Conference, 1998 1998
DOI: 10.1109/euma.1998.338005
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A Neural Network Approach to the Modeling of Heterojunction Bipolar Transistors from S-Parameter Data

Abstract: Artificial neural networks have gained attention as a fast, efficient, flexible and accurate tool in the areas of microwave modeling, simulation and optimization. In this paper, a novel neural network approach is proposed for the modeling of Heterojunction Bipolar Transistors (HBT) directly from their S-Parameter data. The neural network structure incorporates bias current and bias voltage as inputs. This enables us to use the same neural model under different bias conditions. The proposed technique provides r… Show more

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Cited by 27 publications
(14 citation statements)
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“…These neural models can be used in place of computationally intensive physics/EM models of active/passive devices to speed up microwave design. Neural network modeling techniques have been used for a wide variety of microwave applications such as microstrip interconnects [1,2], vias [3,4], spiral inductors [5], FET devices [1,6], and HBT devices [7]. Neural networks have also been used in circuit simulation and optimization [8], filter design [9], impedance matching [10], and synthesis [11].…”
Section: Introductionmentioning
confidence: 99%
“…These neural models can be used in place of computationally intensive physics/EM models of active/passive devices to speed up microwave design. Neural network modeling techniques have been used for a wide variety of microwave applications such as microstrip interconnects [1,2], vias [3,4], spiral inductors [5], FET devices [1,6], and HBT devices [7]. Neural networks have also been used in circuit simulation and optimization [8], filter design [9], impedance matching [10], and synthesis [11].…”
Section: Introductionmentioning
confidence: 99%
“…The universal approximation property of ANN [9][10] provides them the ability to learn any arbitrarily nonlinear input-output relationships [11 -14] from corresponding measured or simulated data. Moreover, researches started investigating NN approaches to model transistor DC [15][16][17][18][19] , small signal [20][21] , and large-signal [22][23][24][25][26][27] behaviors. Xiuping et al [28] have proposed an improved microwave active device modeling technique based on the combination of the equivalent circuit and ANN approaches.…”
Section: Introductionmentioning
confidence: 99%
“…Neural network techniques have been used for a wide variety of microwave applications such as transmission line components [5], [8], vias [31], bends [32], coplanar waveguide (CPW) components [33], spiral inductors [7], field effect transistor (FET) devices [25], [34], heterojuction bipolar transistor (HBT) devices [35], high electron mobility transistor (HEMT) devices [36], [37], filters [38]- [41], amplifiers [42]- [45], mixers [46], antennas [47], embedded passives [4], [26], [27], packaging and interconnects [48], etc. Neural networks have also been used in circuit simulation and optimization [3], [25], [49], signal integrity analysis and optimization of very-large-scale-integration (VLSI) interconnects [48], [50], microstrip circuit design [51], process design [52], microwave impedance matching [53], inverse modeling [54], measurements [55], synthesis [25], [56] and behavioral modeling of nonlinear RF/microwave subsystems [57].…”
Section: Outline Of the Thesismentioning
confidence: 99%