Compact modeling of high-frequency distortion in silicon integrated bipolar transistors

Schröter, M.; Pehlke, D.R.; Lee, T.-Y.

doi:10.1109/16.848303

Cited by 29 publications

(16 citation statements)

References 6 publications

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“…The analysis confirms earlier experimental results (e.g. [9][12]), which are also found for InGaP/GaAs HBTs (e.g. [14]).…”

Section: Theorysupporting

confidence: 91%

“…[5]) and compact models for Si/ SiGe and III-V HBTs (e.g. [9][12] [14]). Due to the lack of space, here only a fairly recent result for a "true" SiGe-HBT (40GHz peak f T [8]) is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…[10]), it has been well-suited for distortion simulation (e.g. [9][12]). However, even the more complicated EC in Fig.…”

Section: Compact Modelingmentioning

confidence: 99%

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Modeling of distortion in bipolar transistors - a review

Schröter

Sakalas

Tran

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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“…The analysis confirms earlier experimental results (e.g. [9][12]), which are also found for InGaP/GaAs HBTs (e.g. [14]).…”

Section: Theorysupporting

confidence: 91%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Modeling of distortion in bipolar transistors - a review

Schröter

Sakalas

Tran

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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“…This relationship is clearly evident in Fig. 1 and has also been experimentally observed in Si BJTs [4].…”

Section: Bias Dependence Of Distortion In Hbtssupporting

confidence: 79%

Optimum bias conditions for linear broadband InGaP/GaAs HBT power amplifiers

Iwamoto

Hutchinson

Scott

et al.

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)

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Absfract -A design strategy for a linear broadbandInGaPlGaAs HBT power ampUfier is presented. This design takes advantage of the bias dependence of the nonlinear basecollector charge, expressed by the CK w VcE and k vs 1 , characteristies ofthe device. Using this technique, it Is shown that the second and third order distortions have separate optimum bias conditions, and furthermore, there is an distortions. This strong bias dependence of the uonUnear orders of distortion are verified on a 24" 0.5-11GHz

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“…Bipolar transistorBias points are chosen in order to be consistent with[3] criteria: • The device is biased in low injection region:…”

mentioning

confidence: 99%

Hicum and BSIM3V3.2.4 non linear behavior validation In RF BICMOS SiGeC 0.25µm process for bipolar and CMOS transistors

Paulin

Beckrich-Ros

Boret

et al. 2007

2007 69th ARFTG Conference

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This paper deals with HiCUM [II and BSIM3V3.2.4 (2) large signal validation. On contrary with traditional approach that deals with output signal at fundamental and harmonics frequencies [31, this study focuses on IIPI and IIP3 figures of merit (FoM). In this way, two input power tones are injected at 2 GHz and 2.1 GHz in respect with the W-CDMA receive band. Thus, not only IIPI could be compared between simulations and measurements, but also IIP3 due to intermodulations.This analysis is based on BiCMOS SiGeC 0.251lm process for RF bipolar and CMOS transistors measurements.On the one hand, an in-house load pull system based on Maury microwaves tuners is described. This bench is used to measure the DUTs at various bias points with source and load impedances close to 50 n. These impedances are characterized at fundamental and at carefully chosen out-of-band frequencies.On the other hand, HiCUM and BSIM3V3.2.4 simulations are compared to measurements. DC parameters and out-of-band impedances importance is highlighted. Accurate DC parameters enable obviously a right gain simulation but above all it leads to a suitable 1M3 level, and thus to a precise IIP3. Moreover, it is demonstrated that H2, H3, 1M2 and 1M3 out-of-band impedances characterization is a necessary and sufficient criterion to validate IIP3FoM.Finally, it will be shown that HiCUM and BSIM3V3.2.4models allow an accurate distortion phenomena description in terms of IIPI and IIP3.

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Compact modeling of high-frequency distortion in silicon integrated bipolar transistors

Cited by 29 publications

References 6 publications

Modeling of distortion in bipolar transistors - a review

Modeling of distortion in bipolar transistors - a review

Optimum bias conditions for linear broadband InGaP/GaAs HBT power amplifiers

Hicum and BSIM3V3.2.4 non linear behavior validation In RF BICMOS SiGeC 0.25µm process for bipolar and CMOS transistors

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