Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

Jen, S.H.; Enz, C. C.; Pehlke, D.R.; Schröter, M.; Sheu, B.J.

doi:10.1109/16.796299

Cited by 137 publications

(29 citation statements)

References 15 publications

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“…At low frequencies, the device can be assumed to be operating in the quasi-static regime, and the following equation holds for terminal currents: (7) where can be gate, drain, bulk, or source. and are functions only of the instantaneous terminal voltages, and they can be obtained directly from the measured -parameters.…”

Section: Low-frequency Lut-lfmentioning

confidence: 99%

“…However, when the operating frequency is close to the device cutoff frequency, the QS assumption fails to accurately predict the device behavior [3]- [5]. Several models have been proposed for the MOS device in the RF range [5]- [7] to account for the non-QS (NQS) effects. These models predict the performance of the circuit with reasonable accuracy at high frequencies [8] but often require time-consuming and complicated optimization routines.…”

Section: Introductionmentioning

confidence: 99%

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Look-Up Table Approach for RF Circuit Simulation Using a Novel Measurement Technique

Agarwal

Jha

Kumar

et al. 2005

IEEE Trans. Electron Devices

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Abstract-A simple and novel measurement technique to obtain three-port network-parameters of MOS transistors from two-port measurements on a single test structure is presented. The measured data is used in the form of a lookup table (LUT) for RF circuit simulation. It is shown that simulation results obtained with the LUT approach for a 2.4-GHz low-noise amplifier match very well with measurements, thus demonstrating the usefulness of the LUT approach. It is also shown that, for high frequencies, it is important to use the tables of -parameters actually measured rather than those interpolated from low-frequency measurements. This is illustrated with a tuned amplifier simulation example.

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Section: Low-frequency Lut-lfmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Look-Up Table Approach for RF Circuit Simulation Using a Novel Measurement Technique

Agarwal

Jha

Kumar

et al. 2005

IEEE Trans. Electron Devices

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“…The application of the integrated measurement system [6] allows for the collection of the RF time domain data required for this modelling approach. This provides an alternative method to traditional DC/S-parameter modelling approaches by modelling the device directly under large signal conditions avoiding the approximations made in DC/S-parameter modelling [7,8]. This technique also inherently models other large signal phenomena such as device self-heating, which is not normally accounted for in small signal modelling.…”

Section: Introductionmentioning

confidence: 97%

Neural network based time domain modelling of 0.18 μm MOSFETs

Toner¹,

Alam²,

Fusco³

et al. 2002

Micro & Optical Tech Letters

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In this paper a new time domain based neural network model of a 0.18 μm RF MOSFET will be demonstrated. The model consists of only three intrinsic non‐linear current sources, each being modelled by a neural network derived from large signal time domain voltage/current waveform measurements at the intrinsic device terminals. This approach negates the traditional method of multi‐bias S‐parameter measurement providing a fast and accurate method of modelling the transistor under large signal conditions. Full verification of the model will be provided against an 80 μm/0.18 μm MOSFET operating at 2.4 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 203–206, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10558

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“…A theory for the interaction mechanism between the radiation and 2DEG was given in [6]. It considered the power transfer to the 2DEG due to the electron movements in both vertical and in-plane directions, corresponding to z and x directions respectively in Figure 1(b).…”

Section: Introductionmentioning

confidence: 99%