Structural and electrical properties of chemical vapor deposited (CVD) W/n-Si0.83Ge0.17/Si(001) and CVD–WSix/n-Si0.83Ge0.17/Si(001) were studied by structural, chemical, and electrical characterizations. W and WSix layers were deposited on n-Si0.83Ge0.17/Si(001) and n-Si(001) at the growth temperature Ts=350–550 °C by low-pressure chemical vapor deposition utilizing WF6 and SiH4 source gases. Structural and chemical properties of CVD–W/n-Si0.83Ge0.17(001) and CVD–WSix/n-Si0.83Ge0.17(001) interfaces were analyzed by x-ray diffraction, transmission electron microscopy, scanning electron microscopy, Rutherford backscattering spectroscopy, and Auger electron spectroscopy. Interfaces of CVD–WSix/n-Si0.83Ge0.17(001) were much sharper than those of CVD–W/n-Si0.83Ge0.17(001). Interfaces of CVD–W/n-Si0.83Ge0.17(001) are very rough presumably due to encroachment of SiGe layers caused by etching reaction of SiGe layers by WF6. Electrical properties of the CVD–W/n-Si0.83Ge0.17(001) and CVD–WSix/n-Si0.83Ge0.17(001) Schottky diodes were characterized by the current–voltage measurements. The measured effective Schottky barrier heights (φBn) of the CVD–W/n-Si0.83Ge0.17(001) Schottky contacts were 0.56±0.01 eV as the deposition temperature, Ts, of W layers increases from 350 to 550 °C, and CVD–WSix/n-Si0.83Ge0.17(001) Schottky contacts with CVD–WSix layers grown at Ts=350 °C showed the φBn values similar to those of CVD–W/n-Si0.83Ge0.17(001).
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