Materials Science and Engineering: B
 2002
DOI: 10.1016/s0921-5107(01)00799-1
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Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)

D.O. Shin
1
,
Young-Soo Ahn
2
,
S. H. Ban
3
et al.
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Cited by 4 publications
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Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

Shin
1
,
Ban
2
,
Ahn
3
et al. 2004
Thin Solid Films
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Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

Shin
1
,
Ban
2
,
Ahn
3
et al. 2004
Thin Solid Films
0
0
0
0
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Epitaxial cobalt silicide formation using a Co/TiSix bilayer on Si (100) by sputtering

Jeong
1
,
Lim
2
,
Lee
3
2003
Surface and Coatings Technology
3
0
1
0
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Structural investigations in the formation of the epitaxial CoSi2 layer using a Co/TiSix bilayer on Si (100)

Jeong
1
,
Ghosh
2
,
Lim
3
et al. 2002
Materials Science and Engineering: B
1
0
0
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