Epitaxial cobalt silicide formation using a Co/TiSix bilayer on Si (100) by sputtering

Jeong, Jinho; Lim, Jong Min; Lee, Chongmu

doi:10.1016/s0257-8972(03)00227-5

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…The silicide formation and abnormal grain growth of other materials on Si substrate at higher annealing temperatures have been reported. 12,13) As silicide is a magnetically dead compound, from spin injection point of view, its formation should to be avoided. To avoid silicide formation, the insertion of a thin insulating layer such as MgO might be a good approach.…”

Section: Resultsmentioning

confidence: 99%

Structural and Magnetic Properties of Co₂MnSi Heusler Alloy Thin Films on Si

Nahid

Oogane

Naganuma

et al. 2009

Jpn. J. Appl. Phys.

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The structural and magnetic properties of Co 2 MnSi thin films grown on n-doped Si(110) and Si(100) substrates were studied and observed to have a strong dependence on annealing temperature (T A ). At T A ¼ 275 { 350 C, the Co 2 MnSi films exhibited the B2 phase with a h100i orientation and a magnetic moment on both substrates. The saturation magnetization (M S ) of Co 2 MnSi thin films was observed to reach a maximum at T A ¼ 300 C, above which it was found to decrease. We consider that at T A ' 300 C, the Co 2 MnSi thin films on Si substrates exhibited the h100i orientation, a high M S and a low roughness which might promote spin injection.

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Section: Resultsmentioning

confidence: 99%

Structural and Magnetic Properties of Co₂MnSi Heusler Alloy Thin Films on Si

Nahid

Oogane

Naganuma

et al. 2009

Jpn. J. Appl. Phys.

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Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate

2006

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Epitaxial growth of Co2MnSi thin films at the vicinal surface of n-Ge(111) substrate

Nahid

Oogane

Naganuma

et al. 2010

Applied Physics Letters

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The structure and magnetic properties of Co2MnSi films on n-Ge(111) substrate were investigated for the motivation of spin injection. The 50-nm-thick Co2MnSi films were fabricated on n-Ge(111) substrates by dc sputtering and postannealed about 1 h at the various temperatures ranging from 200–500 °C. In the annealing temperature range of 300–400 °C, the Co2MnSi were grown epitaxially at the vicinal surface of n-Ge(111) substrates. The epitaxial layer of Co2MnSi films was about 18 nm thick at 350 °C and exhibited ferromagnetic behavior. Interestingly, there was no diffusion of Ge inside the epitaxial layer and atomically flat interface was obtained.

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Epitaxial cobalt silicide formation using a Co/TiSix bilayer on Si (100) by sputtering

Cited by 3 publications

References 16 publications

Structural and Magnetic Properties of Co₂MnSi Heusler Alloy Thin Films on Si

Structural and Magnetic Properties of Co₂MnSi Heusler Alloy Thin Films on Si

Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate

Epitaxial growth of Co2MnSi thin films at the vicinal surface of n-Ge(111) substrate

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Epitaxial cobalt silicide formation using a Co/TiSix bilayer on Si (100) by sputtering

Cited by 3 publications

References 16 publications

Structural and Magnetic Properties of Co2MnSi Heusler Alloy Thin Films on Si

Structural and Magnetic Properties of Co2MnSi Heusler Alloy Thin Films on Si

Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate

Epitaxial growth of Co2MnSi thin films at the vicinal surface of n-Ge(111) substrate

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Product

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Structural and Magnetic Properties of Co₂MnSi Heusler Alloy Thin Films on Si

Structural and Magnetic Properties of Co₂MnSi Heusler Alloy Thin Films on Si