Magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi∕Al–O∕Co2MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al–O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.

Spin precession with frequencies up to 280 GHz is observed in Mn(3-δ)Ga alloy films with a perpendicular magnetic anisotropy constant K(u)∼15  M erg/cm(3). The damping constant α, characterizing macroscopic spin relaxation and being a key factor in spin-transfer-torque systems, is not larger than 0.008 (0.015) for the δ=1.46 (0.88) film. Those are about one-tenth of α values for known materials with large K(u). First-principles calculations well describe both low α and large K(u) for these alloys.

Gilbert damping for the epitaxial Co2FeAl Heusler alloy films was investigated. Gilbert damping constant for the films was evaluated by analyzing the data of ferromagnetic resonance measured at the frequency of 2–20 GHz. Gilbert damping constant for the film without annealing was rather large, while it decreased remarkably with postannealing. Gilbert damping constant for the film annealed at 600 °C was ≃0.001. These behavior of Gilbert damping constant can be well explained by the fact that the density of states calculated from first principles decreases with increasing the degree of B2 order.

The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin-orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C 60 as the spacer layer. A magnetoresistance ratio of over 5% was observed at room temperature, which is one of the highest magnetoresistance ratios ever reported. Most importantly, a large spin-dependent transport length of approximately 110 nm was experimentally observed for the C 60 layer at room temperature. These results provide insights for further understanding spin transport in organic semiconductors and may strongly advance the development of spin-based organic devices.

We report on epitaxial growth and magnetic properties of Mn2.5Ga thin films, which were deposited on Cr/MgO single crystal substrates by magnetron sputtering. X-ray diffraction results revealed the epitaxial relationships as Mn2.5Ga(001)[100]∥Cr(001)[110]∥MgO(001)[100]. The presence of (002) and (011) superlattice peaks indicates that the films were crystallized into DO22 ordered structures. The perpendicular magnetic anisotropy (PMA) properties were found to be related to the extent of DO22 chemical ordering. A giant PMA (Kueff=1.2×107 erg/cm3) and low saturation magnetization (Ms=250 emu/cm3) can be obtained for the film with highest chemical ordering parameter (S=0.8).

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A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.

To investigate the correlation between perpendicular magnetic anisotropy and intrinsic Gilbert damping, time-resolved magneto-optical Kerr effect was measured in Pt/Co(dCo)/Pt films. These films showed perpendicular magnetization at dCo=1.0 nm and a perpendicular magnetic anisotropy energy Kueff that was inversely proportional to dCo. With an analysis based on the Landau–Lifshitz–Gilbert equation, the intrinsic Gilbert damping constant α was evaluated by parameter-fitting of frequency and lifetime expressions to experimental data of angular variations in spin precession frequency and life-times. The α values increased significantly with decreasing dCo but not inversely proportional to dCo.