Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

Shin, D.O.; Ban, S. H.; Ahn, Young-Soo; Lee, Y.S.; Lee, N.-E.; Shim, Kyu–Hwan

doi:10.1016/j.tsf.2003.12.068

Thin Solid Films

2004

DOI: 10.1016/j.tsf.2003.12.068

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Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

D.O. Shin

S. H. Ban

Young-Soo Ahn

et al.

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Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

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References 15 publications

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