Study of electrical and interfacial properties of CVD-W/p-Si0.83Ge0.17/Si(001)

Jang, Young-Beom; Kim, K.S.; Shin, D.O.; Kim, H.J.; Shim, Kyu–Hwan; Lee, N.-E.; Youn, S. P.; Roh, Kwanchong; Roh, Yonghan

doi:10.1016/s0040-6090(00)01445-0

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…And some factors such as defects at the interface, leakage current or the density of interface states may also affect the measured values of SBH [19].…”

Section: Schottky Contact Characteristicsmentioning

confidence: 99%

Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure

Wang¹,

Ru²,

Qu³

et al. 2004

Materials Letters

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“…And some factors such as defects at the interface, leakage current or the density of interface states may also affect the measured values of SBH [19].…”

Section: Schottky Contact Characteristicsmentioning

confidence: 99%

Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure

Wang¹,

Ru²,

Qu³

et al. 2004

Materials Letters

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“…It should be noted that the generation-recombination current in the space charge region may result in an increase of n. 29 And other factors such as Schottky barrier inhomogeneity, tunneling, and interface states may also affect the measured values of SBH and n. 30 Since the n-poly-Si 0.84 Ge 0.16 thin film is lightly doped (ϳ10 15 cm Ϫ3 ), tunneling current can reasonably be neglected. It should be noted that the generation-recombination current in the space charge region may result in an increase of n. 29 And other factors such as Schottky barrier inhomogeneity, tunneling, and interface states may also affect the measured values of SBH and n. 30 Since the n-poly-Si 0.84 Ge 0.16 thin film is lightly doped (ϳ10 15 cm Ϫ3 ), tunneling current can reasonably be neglected.…”

Section: Current-voltage "I -V… Characteristicsmentioning

confidence: 99%

Solid-phase reaction and Schottky contact properties of Co/n-poly-Si0.84Ge0.16/n-Si (100)

Wang

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The Schottky contact of Co, its silicide and germanosilicide on n-poly-Si 0.84 Ge 0.16 layer, was investigated. Amorphous Si 0.84 Ge 0.16 layer was deposited on n-Si ͑100͒ substrate by ion beam sputtering ͑IBS͒. The layer was doped through thermal diffusion of phosphorus to fabricate n-poly-Si 0.84 Ge 0.16 thin film. The Schottky diodes were formed by deposition of Co on n-poly-Si 0.84 Ge 0.16 by the IBS technique. Solid-phase reaction between Co and n-poly-Si 0.84 Ge 0.16 by rapid thermal annealing ͑RTA͒ as a function of temperature was studied. Phase identification and atomic depth profile were characterized by x-ray diffraction and Auger electron spectroscopy, respectively. The current-voltage and capacitance-voltage characteristics of both as-deposited and annealed Co/n-poly-Si 0.84 Ge 0.16 Schottky diodes were investigated. The results reveal that the Schottky barrier height ͑SBH͒ keeps nearly constant with the annealing temperature between 300 and 600°C. The constancy of the SBH confirms the fact that Co and its silicides contacting with the same semiconductor have the close Schottky barrier height.

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“…For example, Schottky barrier height ͑SBH͒ of metal/poly-SiGe contact is not available though there are some reports on SBH of metal/epitaxial SiGe contact. [15][16][17][18][19][20][21][22][23] But the knowledge of SBH may be important for poly-SiGe's application in some cases, such as the elevated source/drain MOS device. This work presents the preparation of poly-SiGe Schottky barrier diode ͑SBD͒ and pn junction by IBS technique.…”

Section: Introductionmentioning

confidence: 99%

Rectifying characteristics of sputter-deposited SiGe diodes

Wang

Jiang

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe.

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Study of electrical and interfacial properties of CVD-W/p-Si0.83Ge0.17/Si(001)

Cited by 5 publications

References 18 publications

Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure

Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure

Solid-phase reaction and Schottky contact properties of Co/n-poly-Si0.84Ge0.16/n-Si (100)

Rectifying characteristics of sputter-deposited SiGe diodes

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