Abstract:The Schottky contact of Co, its silicide and germanosilicide on n-poly-Si 0.84 Ge 0.16 layer, was investigated. Amorphous Si 0.84 Ge 0.16 layer was deposited on n-Si ͑100͒ substrate by ion beam sputtering ͑IBS͒. The layer was doped through thermal diffusion of phosphorus to fabricate n-poly-Si 0.84 Ge 0.16 thin film. The Schottky diodes were formed by deposition of Co on n-poly-Si 0.84 Ge 0.16 by the IBS technique. Solid-phase reaction between Co and n-poly-Si 0.84 Ge 0.16 by rapid thermal annealing ͑RTA͒ as a… Show more
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