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An experimental technique is described for determination of the generation carrier lifetime as a function of the distance of the insulator-semiconductor interface. This method is applied to thin films of silicon on sapphire nominally 1 μ thick and doped n type.

Originally the mobility p in polar semiconductors was calculated by Horwarth and Sondheimer (1) with the aid of a variational principle. Their results can be written in the form where T i s the lattice temperature, 0 i s the longitudinal optical phonon frequency,