Hall and drift mobility of polar p-type semiconductors. I. Theory

Galvanomagnetic Properties of p‐Hg1−xCdxTe

“…The value of the static dielectric constant E, also agrees relatively well with that determined experimentally by Aronzon et al [21]. to the total polar mobility ppol (l/pp,,l = 1/p6'6, + l/&,)1) is given as [18,201 For p-like wave functions, GF) has been calculated by Kranzer [22] for 0 5 6JT 5 8, for Oi/T > 8 it has been determined from extrapolation assuming that for B,/T x 25,…”

“…The results of Kranzer [22] show that for the heavy hole-light hole effective mass ratio mE/m% > lo2 as in Hgl -,Cd,Te and provided that the intervalley scattering is properly taken into account, the influence of the light hole on the mobility is fully negligible.…”

On Hall scattering factors for holes in GaAs

“…11 also give Hall factors on the order of 1.6-2.0 for pure material. [4][5][6] Thus, at 296 K, theory predicts that r n Ӎ1 and r p Ӎ2 over the range of concentrations presented here.…”

“…Although the individual band Hall factors, r pl and r ph , respectively, are also in the range 1.0-1.2 ͑if the bands are noninteracting͒, the combined Hall factor can be much larger. 4 A few calculations have included much ͑although not all͒ of the necessary complexity of hole transport in GaAs; [4][5][6][7][8] Wiley has given an excellent discussion of the various problems involved. 9 Values of r p determined in most of the calculations are significantly larger than unity, ranging from 1.25 to greater than 2.…”

“…9 Values of r p determined in most of the calculations are significantly larger than unity, ranging from 1.25 to greater than 2. 4,6,8,10,11 Such large r p 's, if accurate, can lead to significant error in determining p from a Hall-effect measurement, since most workers simply assume rϭ1 for holes, as they do for electrons.…”