Mobility of holes of zinc-blende III–V and II–VI compounds

Kranzer, D.

doi:10.1002/pssa.2210260102

Cited by 94 publications

(40 citation statements)

References 77 publications

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“…The peak at 1.1952 eV is close to the estimated position of the no-phonon line (1.215 eV) of the band-Ge acceptor transitions (Žďánský et al, 2001 Fine spectral features of the PL spectra, low donor and acceptor concentrations, and high mobilities indicate that Pr addition to the growth melts results in high purity p-type InP layers. The RT hole mobility of the InP:(Pr) sample of 144 cm 2 /Vs is close to the value theoretically expected for pure p-type InP (Kranzer, 1974). Maximum mobility of 848 cm 2 /Vs is reached at 130 K. This value is slightly smaller than low concentration Zn, Cd, and Mg doped p-type InP (Kuphal, 1981).…”

Section: Terbium Dysprosium and Praseodymiumsupporting

confidence: 85%

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Grym¹,

Procházková²,

Zavadil³

et al. 2010

Semiconductor Technologies

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Section: Terbium Dysprosium and Praseodymiumsupporting

confidence: 85%

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Grym¹,

Procházková²,

Zavadil³

et al. 2010

Semiconductor Technologies

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“…where μ p ¼ 57ðe 252=T À 1Þcm 2 =V s is the mobility of the charge carriers [39]. We investigate the effect of the temperature in this analysis of DOS profile of the dominant traps, obtained from I-V curves.…”

Section: Sclc Analysismentioning

confidence: 99%

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Turturici

Abbene

Gerardi

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tPixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4 Â 4) pixelated Schottky Al/p-CdTe/Pt detector. Current-voltage (I-V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current-voltage characteristics.

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“…Kranzer in his review article 6 has treated the problem of hole mobility of various III-V and II-VI compound semiconductors, solving the Boltzmann transport equation ͑BTE͒ exactly in two k-space coordinates. Kranzer assumes a spherical parabolic model for both bands; while this model is strictly not correct, the effect of band-warping is taken into account by postulating two effective masses for each band, one of which describes the density-of-states, thus entering the expressions for scattering rates, while the other describes the group velocity, thus entering expressions for the current.…”

Section: Introductionmentioning

confidence: 99%

“…One of the limitations of Ref. 6 as applied to the problem under study is the nondegenerate approximation to the BTE: however this is not a serious limitation and it is only slightly more cumbersome to treat the full BTE. Reference 7 presents hole mobility calculations with intraband optical-mode phonon scattering treated exactly using a variational approach; however interband scattering is still treated under the relaxation time approximation.…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric transport in the coupled valence-band model

Ramu¹,

Cassels²,

Hackman³

et al. 2011

Journal of Applied Physics

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The Boltzmann transport equation ͑BTE͒ is applied to the problem of thermoelectric transport in p-type semiconductors whose valence band-structure is describable in terms of two bands degenerate at the ⌫ point. The Seebeck coefficient and mobility are calculated from the solution to two coupled BTEs, one for each band, with interband scattering and scattering by inelastic mechanisms treated exactly by the application of an algorithm developed by the authors in an earlier work. Most treatments of this problem decouple the two bands by neglecting certain terms in the BTE, greatly simplifying the mathematics: the error in the Seebeck coefficient and mobility introduced by this approximation is quantified by comparing with the exact solution. Degenerate statistics has been assumed throughout, and the resulting formalism is therefore valid at high hole concentrations. Material parameters are used that have been deduced from optical, strain and other experiments often not directly related to hole transport. The formulations in this work thus do not use adjustable or fitting parameters. The transport coefficients of heavily doped gallium antimonide, a typical high-efficiency p-type thermoelectric material, are calculated and agreement to experimentally determined values is found to be satisfactory.

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Mobility of holes of zinc-blende III–V and II–VI compounds

Cited by 94 publications

References 77 publications

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Thermoelectric transport in the coupled valence-band model

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