Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content.

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Twins were diagnosed by ultrasound in a 29-year-old woman. The cesarean delivery revealed at first a mature girl with a large benign sacrococcygeal teratoma and then a healthy boy. X-ray and CT examinations of the teratoma showed pelvic and lower limb bones. A mature teratoma-tridermoma (weight 475 g) containing the underdeveloped lower half of a human body was confirmed during surgery and verified morphologically. The fraternal twins, i.e., the girl operated upon and her brother, have been followed for 5 years and are without any complaints. They have normal neurological function.

We are IntechOpen, the world's leading publisher of Open Access books Built by scientists, for scientists 12.2% 108,000 1.7 M TOP 1% 151 3,500Role of rare-earth elements in the technology of III-V semiconductors prepared by liquid phase epitaxy 295

InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe substrate with cerium (Ce) and ytterbium (Yb) additions to the growth melt. Grown layers were characterised by Hall measurements and low temperature photoluminescence spectroscopy. Both types of layers exhibit the change of electrical conductivity from n to p type. Ce and Yb have been found to be incorporated into the InP lattice since a sharp luminescence lines arising from inner shell transitions of Yb 3+ and Ce 3+ were detected at 1002 and 3534 nm, respectively. A metastable conductivity state of InP:Ce layers has been found at temperatures below 35 K, a phenomenon previously reported for InP:Yb layers. Similar electrical behaviour of InP (Ce, Yb) layers leads us to conclude that Ce acts as dominant acceptor impurity responsible for n→p conductivity change.