Hall and drift mobility of polar p-type semiconductors. II. Application to ZnTe, CdTe, and ZnSe

The physical properties of cadmium telluride

“…We have used the standard theoretical expression to calculate values of ni for temperatures between 300 and 1 200 K by adopting the following values for these parameters : m:/mo = 0.1, and m:/mo = 0.8. The expression for Eg is based on the exciton reflectance data mentioned previously, the electron effective mass approximates the value of 0.0963 obtained by Mears and Stradling [52] from cyclotron resonance data, and the hole effective mass is the heavy-hole mass value that Kranzer [53] found to give the best fit between his theoretical mobility calculations and the experimental data. This choice of parameters leads to the following equation for the intrinsic carrier concentration :…”

Mobility of holes of zinc-blende III–V and II–VI compounds

“…This is partly due to the lack of experimental information concerning the band parameters and partly due to the simplifications inherent in model B2. Furthermore, because of the assumption of spherical bands model B2 does not yield reasonable results if it is extended to calculate the galvanomagnetic properties [7]. Consequently there is a need for a rigorous theory including the warping of the bands and PO scattering.…”

“…Consequently nonparabolicity of the light hole band can be neglected for drift mobility investigations. [ 7 ] . To obtain agreement with experiment an additional scattering mechanism leading to padd = CT" has been assumed.…”

The electrical transportation and carrier behavior of ZnSe under high pressure

“…According to the previous reports, the mobility of ZnSe is mainly limited by the longitudinal optical phonon scattering [27][28][29][30] and the ionized impurity scattering. [31] For the intermediate phase, the ionized impurity concentration increases with pressure (the defect can be seen as a kind of impurity).…”