The physical properties of cadmium telluride

Abstract

2014 Cet article passe en revue les propriétés structurales, thermiques, mécaniques, optiques et électriques du tellurure de cadmium. Celles-ci sont par ailleurs comparées aux propriétés physiques des autres composés IIB-VIA.

Shot Noise in Linear Macroscopic Resistors

“…The choice of CdTe has been motivated by the fact that this semiconductor material allows for a high degree of compensation [12], thus presenting the desired semiinsulating property. Moreover, it displays linear velocityfield characteristics up to several kV=cm at room temperature [12], thus allowing one to apply considerable high voltages without the presence of hot-electron effects. Furthermore, the use of metal-semiconductor contacts is motivated by the fact that metals on semi-insulating materials exhibit the required nearly perfect Ohmic behavior in a wide range of voltages, since the carrier density at the interface imposed by the contact is of the same order of magnitude as the free carrier density of the semi-insulating material [13].…”

“…A best fit to the experiments gives a resistance R 323K 0:233 G, which implies a resistivity 0:233 G cm. From these parameters, and by using [12] r 12, the dielectric relaxation time for the material is d 0:3 ms. Therefore, by extracting a mobility corresponding to holes 50 cm 2 =V s from the measurement of the cutoff frequency in the noise spectra in the shot noise region [14] (the sample is known to be p type [15]), and for an applied bias of 10 V, the transit time is T 0:08 ms, thus making accessible the shot noise condition ( T d ) for applied bias above a few tens of volts.…”

Photoluminescence studies of type-II CdSe/CdTe superlattices

“…As shown in Fig. 2(a), the PL peak energy of the superlattice is smaller than the bandgap energy of either CdTe (1.61 eV) 9,12,13 or cubic CdSe (1.76 eV), 9,10 suggesting a type-II band edge alignment. Furthermore, the PL peak shifts to higher energy as the excess carrier concentration increases.…”

Solar cells made from p-CdTe films grown with ion-assisted doping

“…A second advantage in controlling the carrier density in p-CdTe is in the optimization of the open-circuit voltage, V, , (5). Group V elements P, As, or Sb are readily incorporated into single crystals of CdTe grown from the liquid (6), with the carrier density reaching a maximum of -2~1 0 '~ using P (7). On the other hand, preparation of p-CdTe from the vapor by conventional film growth techniques has been difficult.…”