Solar cells made from p-CdTe films grown with ion-assisted doping

Sharps, Paul; Fahrenbruch, Alan L.; Lopez‐Otero, A.; Bube, Richard H.

doi:10.1109/pvsc.1988.105990

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Cdcd = Cd(g) + Vcd1

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1996

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“…Successive etching and C-V measurement was found to be a useful method to obtain a complete hole density profile in p-CdTe:P. This method was later used by Sharps et aL [30] in order to construct the hole density profiles in ion-doped p-CdTe:P epitaxial layers grown with varying ion doses.…”

Section: Cdcd = Cd(g) + Vcdmentioning

confidence: 99%

A study on the mechanism of the hole density depletion in p-type cadmium telluride during heat treatment

Kim

Fahrenbruch

Bube

1996

Metals and Materials

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The phonomenon of hole density decrease in p-type cadmium telluride (CdTe) after annealing was investigated in order to identify the responsible mechanism. A model is suggested for the mechanism. By successive etching and capacitance-voltage (C-V) profiling, we proved that the effect was a reality and not an artifact of C-V measurements. It was shown that the hole density decrease was related with evaporation of CdTe at the surface but not with the out-diffusion of the dopant impurity. Annealing under various cadmium vapor pressures showed results which indicate that the dopant impurity taking cadmium sites are responsible for the cartier loss. The suggested mechanism was confirmed by annealing cesium-doped CATe which showed increase in hole density. The depiction of surface hole density was reversed when further evaporation of CdTe at the surface was suppressed.

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Section: Cdcd = Cd(g) + Vcdmentioning

confidence: 99%