Interconnect features of W metal, recessed in an SiO2 dielectric, can be formed using a novel chemical‐mechanical polish process. Mechanical action, to continually disrupt a surface passivating film on W, and chemical action, to remove W, appear to be requirements for workability of the process. A trial process chemistry using a ferricyanide etchant is described. Removal of the W is discussed in terms of competition between an etching reaction which dissolves W and a passivation reaction to reform WO3 on the surface of the W. This novel processing technology is compared with earlier methods of fabricating metal interconnect structures.

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We have demonstrated a new planarized all-refractory technology for low Tc superconductivity (PARTS). With the exception of the Nb-AlOx-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5–100 μm2. Junction quality is excellent with the figure of merit Vm typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.