Transistor designs based on using mixed -L valleys for electron transport are proposed to overcome the density of states bottleneck while maintaining high injection velocities. Using a self-consistent top-of-the-barrier transport model, improved current density over Si is demonstrated in GaAs/AlAsSb, GaSb/AlAsSb, and Ge-on-insulator-based singlegate thin-body n-channel metal-oxide-semiconductor field-effect transistors. All the proposed designs successively begin to outperform strained-Si-on-insulator and InAs-on-insulator (InAs-OI) in terms of ON-state currents as the effective oxide thickness is reduced below 0.7 nm. InAs-OI still exhibits the lowest intrinsic delay (τ ) due to its single valley.

We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with = 3 10 19 cm 3 . The obtainedand MAX values at a current density of 1 mA/ m 2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

The ALICE experiment will require some 1200 Readout Chips for the construction of the Silicon Pixel Detector [1] and it has been estimated that approximately 3000 units will require testing. This paper describes the system that was developed for this task.

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