A Degenerately Doped $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ Bipolar Junction Transistor

Yalon, Eilam; Elias, D.C.; Gavrilov, A.; Cohen, Shimon; Halevy, Ran; Ritter, D.

doi:10.1109/led.2010.2084557

Cited by 6 publications

(4 citation statements)

References 10 publications

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“…Bipolar transistors having similar structures were demonstrated that exhibit cutoff frequency in the range of ∼100 GHz [24], [25], though the high frequency operation of a transistor having a filament emitter is yet to be evaluated.…”

Section: Discussionmentioning

confidence: 99%

Thermometry of Filamentary RRAM Devices

Yalon

Sharma

Skowroński

et al. 2015

IEEE Trans. Electron Devices

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Since thermal effects play a major role in filamentary RRAM devices, we compare the two localized thermometry methods developed for such devices. One method is based on short-pulsed measurements and the other on the measurement of minority-carrier injection from the filament into a semiconductor electrode by thermionic emission. We carried out and compared the measurements on the same functional oxide layer. Both methods indicate that the filament temperature is at least ∼550 K during device operation. Furthermore, comparison between the measured thermal resistance and the thermal simulations of both techniques shows that under the conditions of low forming current compliance (∼10 μA), the filament dimensions are below ∼5 nm. We show that the thermionic emission method is useful for high-resistance (>100 k ) devices operating at low-power conditions (<10 μW), whereas the pulsed thermometry is more suitable for lower resistance devices (<500 k ) operated above 1 μW. The average thermal resistance measured by the pulse technique decreases with applied power. Our simulations indicate that the expansion of the heated zone surrounding the filament can explain the observed reduction in thermal resistance with applied power. The underlying physics of the two methods is discussed.

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Section: Discussionmentioning

confidence: 99%

Thermometry of Filamentary RRAM Devices

Yalon

Sharma

Skowroński

et al. 2015

IEEE Trans. Electron Devices

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“…Typical contact resistance of the metal/p-InGaAs system at a doping concentration of p = 5 × 10 19 (cm −3 ), as in our experiment, is of the order of ρ c ∼ 10 Ω μm 2 . 45,46 Hence, when the filament grows from the metal electrode towards the semiconductor, and the filament tip diameter is of the order 1-10 nm, 21,32 the contact resistance of the filaments is 10 5 -10 7 Ω. In this case, most of the applied voltage drops across the filament semiconductor contact, and the small area Ohmic contact between the filament and the semiconductor is practically equivalent to a tunnelling gap.…”

Section: The Insulating Gap At a Semiconductor Electrodementioning

confidence: 99%

Detection of the insulating gap and conductive filament growth direction in resistive memories

et al. 2015

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Filament growth is a key aspect in the operation of bipolar resistive random access memory (RRAM) devices, yet there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change RRAM devices. We report here that an insulating gap between the filament and the semiconductor electrode can be detected by the metal-insulator-semiconductor bipolar transistor structure, and thus provide information on the filament growth direction. Using this technique, we show how voltage polarity and electrode chemistry control the filament growth direction during electro-forming. The experimental results and the nature of a gap between the filament and an electrode are discussed in light of possible models of filament formation.

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“…The design of track and hold switches is benefited of using high speed base-collector (BC) diodes rather than base-emitter (BE) in the form of switched emitter follower stages for the following reasons: 1) Fast HBTs in this technology are fabricated using thin and highly doped BE junctions which degrades the break-down voltage [6], [7]. 2) The time constant of R on C of f (where R on is the forward bias resistance of the diode and C of f is the depletion region capacitance) in the BE diode is much larger than the one in the BC diode which makes the BC diode a faster switch.…”

Section: Track and Hold Amplifier Designmentioning

confidence: 99%

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

Daneshgar

Griffith

Rodwell

2012

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 µm InP HBT technology. High speed switching functionality in the amplifier is achieved using base-collector diodes rather than switched-emitter-followers (SEF). Operating with −5 V and −2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of −30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.

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A Degenerately Doped $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ Bipolar Junction Transistor

Cited by 6 publications

References 10 publications

Thermometry of Filamentary RRAM Devices

Thermometry of Filamentary RRAM Devices

Detection of the insulating gap and conductive filament growth direction in resistive memories

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

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A Degenerately Doped $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ Bipolar Junction Transistor

Cited by 6 publications

References 10 publications

Thermometry of Filamentary RRAM Devices

Thermometry of Filamentary RRAM Devices

Detection of the insulating gap and conductive filament growth direction in resistive memories

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 &#181;m InP HBT Technology

Contact Info

Product

Resources

About

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology