Conceptual disadvantages of typical resonant phonon terahertz quantum cascade lasers ͑THz-QCLs͒ are analyzed. Alternative designs and their combination within a concrete device proposal are discussed to improve the QCL performance. The improvements are ͑1͒ indirect pumping of the upper laser level, ͑2͒ diagonal optical transitions, ͑3͒ complete electron thermalization, and ͑4͒ materials with low effective electron masses. The nonequilibrium Green's function method is applied to predict stationary electron transport and optical gain. The proposed THz-QCL shows a higher optical gain, a lower threshold current, and a higher operation temperature. Alloy disorder scattering can worsen the QCL performance.

The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are extracted considering both thermionic emission and thermally assisted tunneling. Nanowires as small as 10 nm in diameter were used in device geometry in this context. Interestingly, while experimental and simulation data are consistent with a band gap increase for decreasing nanowire diameter, the experimentally determined Schottky barrier height is found to be around 110 meV irrespective of the nanowire diameter. These observations indicate that for nanowire devices the density of states at the direct conduction band minimum impacts the so-called branching point. Our findings are thus distinctly different from bulk-type results when metal contacts are formed on three-dimensional InAs crystals.

No abstract

No abstract

No abstract