Passive Q-switching or mode-locking by placing a saturable absorber inside the laser cavity is one of the most effective and popular techniques for pulse generation. However, most of the current saturable absorbers cannot work well in the visible spectral region, which seriously impedes the progress of passively Q-switched/mode-locked visible pulsed fibre lasers. Here, we report a kind of visible saturable absorber-two-dimensional transition-metal dichalcogenides (TMDs, e.g. WS2, MoS2, MoSe2), and successfully demonstrate compact red-light Q-switched praseodymium (Pr(3+))-doped all-fibre lasers. The passive Q-switching operation at 635 nm generates stable laser pulses with ∼200 ns pulse duration, 28.7 nJ pulse energy and repetition rate from 232 to 512 kHz. This achievement is attributed to the ultrafast saturable absorption of these layered TMDs in the visible region, as well as the compact and all-fibre laser-cavity design by coating a dielectric mirror on the fibre end facet. This work may open a new route for next-generation high-performance pulsed laser sources in the visible (even ultraviolet) range.

Pulsed lasers operating in the mid-infrared (3–20 μm) are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism remains a significant technological challenge. Here we show that bulk Dirac fermions in molecular beam epitaxy grown crystalline Cd3As2, a three-dimensional topological Dirac semimetal, constitutes an exceptional ultrafast optical switching mechanism for the mid-infrared. Significantly, we show robust and effective tuning of the scattering channels of Dirac fermions via an element doping approach, where photocarrier relaxation times are found flexibly controlled over an order of magnitude (from 8 ps to 800 fs at 4.5 μm). Our findings reveal the strong impact of Cr doping on ultrafast optical properties in Cd3As2 and open up the long sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.

Pulsed lasers operating in the mid-infrared (3-25 µm) are increasingly becoming the light source of choice for a wide range of industrial and scientific applications such as spectroscopy, biomedical research, sensing, imaging, and communication. Up to now, one of the factors limiting the mid-infrared pulsed lasers is the lack of optical switch with a capability of pulse generation, especially for those with wideband response. Here, a semiconductor material of bismuth oxyselenide (Bi O Se) with a facile processibility, constituting an ultrabroadband saturable absorber for the mid-infrared (actually from the near-infrared to mid-infrared: 0.8-5.0 µm) is exhibited. Significantly, it is found that the optical response is associated with a strong nonlinear character, showing picosecond response time and response amplitude up to ≈330.1% at 5.0 µm. Combined with facile processibility and low cost, these solution-processed Bi O Se materials may offer a scalable and printable mid-infrared optical switch to open up the long-sought parameter space which is crucial for the exploitation of compact and high-performance mid-infrared pulsed laser sources.

Bi2O2Se, a high‐mobility and air‐stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se‐based devices remains a challenge. A broadband phototransistor with high photoresponsivity (R) is reported that comprises high‐quality large‐area (≈180 µm) Bi2O2Se nanosheets synthesized via a modified chemical vapor deposition method with a face‐down configuration. The device covers the ultraviolet (UV), visible (Vis), and near‐infrared (NIR) wavelength ranges (360–1800 nm) at room temperature, exhibiting a maximum R of 108 696 A W−1 at 360 nm. Upon illumination at 405 nm, the external quantum efficiency, R, and detectivity (D*) of the device reach up to 1.5 × 107%, 50055 A W−1, and 8.2 × 1012 Jones, respectively, which is attributable to a combination of the photogating, photovoltaic, and photothermal effects. The devices reach a −3 dB bandwidth of 5.4 kHz, accounting for a fast rise time (τrise) of 32 µs. The high sensitivity, fast response time, and environmental stability achieved simultaneously in these 2D Bi2O2Se phototransistors are promising for high‐quality UV and IR imaging applications.

Downregulation of STAT4 in HCC indicated aggressive tumor behavior and predicted a worse clinical outcome. STAT4 might be a useful biomarker to identify patients at high risk of recurrence after hepatectomy.

The hot-carrier relaxation dynamics of Cd3As2 thin films has been investigated by using femtosecond pump-probe spectroscopy in a transmission geometry. A comparative study of degenerate and non-degenerate experiments reveals that hot-carrier distribution in Cd3As2 is established with a time constant of ∼400 fs. Significantly, the broadband measurements allow the extraction of the time evolution of electron temperature and the carrier-phonon coupling factor g = 5.3 × 1015 W m−3 K−1 is deduced by a semiclassical two-temperature model. These results provide fundamental insights into the hot-carrier dynamics of Cd3As2.

LINE-1 hypomethylation is significantly associated with poor prognosis in patients with HCC, possibly due to activation of c-MET expression.

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