An Ultrabroadband Mid‐Infrared Pulsed Optical Switch Employing Solution‐Processed Bismuth Oxyselenide

Abstract

Pulsed lasers operating in the mid-infrared (3-25 µm) are increasingly becoming the light source of choice for a wide range of industrial and scientific applications such as spectroscopy, biomedical research, sensing, imaging, and communication. Up to now, one of the factors limiting the mid-infrared pulsed lasers is the lack of optical switch with a capability of pulse generation, especially for those with wideband response. Here, a semiconductor material of bismuth oxyselenide (Bi O Se) with a facile processibility, constituting an ultrabroadband saturable absorber for the mid-infrared (actually from the near-infrared to mid-infrared: 0.8-5.0 µm) is exhibited. Significantly, it is found that the optical response is associated with a strong nonlinear character, showing picosecond response time and response amplitude up to ≈330.1% at 5.0 µm. Combined with facile processibility and low cost, these solution-processed Bi O Se materials may offer a scalable and printable mid-infrared optical switch to open up the long-sought parameter space which is crucial for the exploitation of compact and high-performance mid-infrared pulsed laser sources.

SnSe2 Nanosheets for Subpicosecond Harmonic Mode‐Locked Pulse Generation

“…[25][26][27][28][29][30][31][32][33][34][35][36] Due to the different parameters of the passively mode-locked fiber laser cavity, different soliton outputs can be achieved, such as traditional soliton, noise-like soliton, bound state soliton, dissipative soliton, multipulse operation, etc. [37][38][39][40][41][42][43][44] Among them, only multi-pulse operation can effectively improve the RPR of mode-locking pulse without reducing the cavity length. Harmonic mode locking is a special multi-pulse operation.…”

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

“…Liu's group reported utrasensitive Bi 2 O 2 Se phototransistors with a responsivity up to 3.5 × 10 4 A · W −1 at 532 nm, while the dark current was just several pA [169]. Tian et al focused on nonlinear absorption of polycrystalline Bi 2 O 2 Se, demonstrating an ultrabroadband optical switch covering the NIR and mid-infrared ray ranges [178]. Yin et al reported an infrared PD based on 2D Bi 2 O 2 Se, which demonstrated a high sensitivity of 65 A · W −1 at 1200 nm and ultrafast photoresponse of ~1 ps at room temperature ( Figure 6J) [171].…”

Mid‐infrared luminesce of ZnS:Cr2+‐glass composite and fiber

“…Mid‐IR light source is crucial for various applications related to spectroscopy, sensing, and imaging in the molecular fingerprint region . Design and fabrication of new luminescent materials operating in the Mid‐IR region lies in the core of this topic .…”

“…Mid-IR light source is crucial for various applications related to spectroscopy, sensing, and imaging in the molecular fingerprint region. [1][2][3][4][5][6][7][8] Design and fabrication of new luminescent materials operating in the Mid-IR region lies in the core of this topic. [9][10][11][12][13] In order to obtain materials with broadband emission, many approaches such as codoped with rare-earth ions, embedding Mid-IR activators into chalcogenide glasses, etc., have been explored.…”