This article proposes a type of transtibial socket composed of an inner layer fabricated by a rapid prototyping (RP) machine and an outer layer coated with unsaturated polyester resin. This work integrates contemporary technologies including a handheld scanner and CAD systems, to design a thin primary socket shape and then manufactures the socket using a fused deposition-modeling machine. To prevent breakage caused by the layer-based forming process and to reinforce flexural strength, the current research coats the preliminary RP socket with a layer of unsaturated polyester resin. After shaping the proximal brim of the resin-reinforced RP socket to match the specific stump, this study assembles and aligns a shank and a prosthetic foot to form a prosthesis set. After completing a trial safety walk wearing the prosthesis, which is satisfactory to the amputee and a registered prosthetist, this research measures interface pressures between the stump and the resin-reinforced RP socket. Experiment results demonstrate that the resin-reinforced RP socket is applicable for transtibial amputees. In addition to strengthening the FDM socket and producing consistent socket fit, this study also demonstrates a feasible procedure that employs current technologies to design and manufacture transtibial sockets without plaster moulds.
An interesting hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode has been fabricated and studied. Both the steady state and the transient condition of the hydrogen adsorption process are investigated. Even at room temperature, an extremely low hydrogen concentration of 15 ppm H 2 /air can be detected. In addition, the wide operating temperature range of 250 K of the studied Pd/InGaP hydrogen sensor is found. From experimental results, it is shown that the variation of Schottky barrier height increases with the increase of the operating temperature and hydrogen concentration. As the operation temperature is elevated, the water formation effect is also studied in the quasi-equilibrium region under the transient condition.
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