Hydrogen sensing characteristics of a Pt–oxide–Al0.3Ga0.7As MOS Schottky diode

Cheng, C. C.; Tsai, Yi Ju; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Liu, Wen‐Chau

doi:10.1016/j.snb.2003.12.011

Cited by 35 publications

(24 citation statements)

References 18 publications

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“…Our SBHs obtained by the I-V and C-V measurements are consistent with the reported values of 0.61 À 0.86 eV for n-InGaN-based Schottky diodes and 0.66 À0.98 eV for n-GaN-based Schottky diodes made by MOCVD [2,5]. Some reported SBHs showed a big change after annealing [6,7,12]; our SBH was relatively stable after annealing at 400 1C. The obtained electrical parameters from our MOS Schottky diode made all by sputtering are compatible to those from MS and MOS devices made by MOCVD and other approaches [2][3][4][5][6][7][8][9][10][11][12].…”

Section: Tablesupporting

confidence: 91%

“…Some reported SBHs showed a big change after annealing [6,7,12]; our SBH was relatively stable after annealing at 400 1C. The obtained electrical parameters from our MOS Schottky diode made all by sputtering are compatible to those from MS and MOS devices made by MOCVD and other approaches [2][3][4][5][6][7][8][9][10][11][12].…”

Section: Tablementioning

confidence: 67%

“…The development of a high-quality thin insulator layer for the catalytic MOS Schottky diode is a key issue. This can be attributed to the influence of the accumulation layer of the MOS regions during the forward bias, which affects the value of R s [3,4,12]. The smaller-band gap InGaN instead of largerband gap GaN as a semiconductor for MOS also greatly affects the R s value.…”

Section: Tablementioning

confidence: 99%

“…By C-V measurement at the frequency of 1 MHz, the barrier height, Fermi level, and carrier concentration were found to be 0.99 eV, 0.086 eV, and 9.82 Â 10 14 cm À 3 , respectively. Cheng et al also studied the SBH of Pt-oxide-Al 0.3 Ga 0.7 As MOS diodes versus hydrogen concentration [12], which decreased from 1.03 eV to 0.86 eV after annealing in hydrogen atmosphere. Karadeniz et al studied the electric properties of Al/SnO 2 /p-Si (111) MOS Schottky diodes prepared by the spray deposition method [13].…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Tuan

Kuo

2015

Materials Science in Semiconductor Processing

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Section: Tablesupporting

confidence: 91%

Section: Tablementioning

confidence: 67%

Section: Tablementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Tuan

Kuo

2015

Materials Science in Semiconductor Processing

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“…The first gas sensor based on MIS technology is attributed to Lundström et al [1], who in 1975 reported a hydrogen-sensitive Pd-MOS transistor fabricated on conventional silicon (Si) substrate. Later, the introduction of wide band-gap semiconductors, such as SiC, group-III nitrides (AlN, GaN and AlGaN) and diamond, made possible the increase of the operating temperature of the device above that of Si (limited to below 250 • C) [2][3][4][5]. The higher operating temperature allows the devices to work nearer the source of the hazardous gases, which are usually produced in high temperature conditions.…”

Section: Introductionmentioning

confidence: 99%

SiC-based MIS gas sensor for high water vapor environments

Casals

Becker²,

Godignon

et al. 2012

Sensors and Actuators B: Chemical

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a b s t r a c tIn this work we will prove that SiC-based MIS capacitors can work in environments with extremely high concentrations of water vapor and still be sensitive to hydrogen, CO and hydrocarbons, making these devices suitable for monitoring the exhaust gases of hydrogen or hydrocarbons based fuel cells. Under the harshest conditions (45% of water vapor by volume ratio to nitrogen), Pt/TaO x /SiO 2 /SiC MIS capacitors are able to detect the presence of 1 ppm of hydrogen, 2 ppm of CO, 100 ppm of ethane or 20 ppm of ethene, concentrations that are far below the legal permissible exposure limits.

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Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Sahoo

Kale

2021

Adv Materials Inter

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Solar PV and wind energy conversion systems convert input energy directly to electricity, are techno-economically viable, and have already achieved grid parity. [3,4] Though renewables fulfill most modern energysource criteria, they still possess low energy density, are challenging to transport, less efficient, costly, and are intrinsically intermittent, thus requiring a storage media.Hydrogen, a less popular renewable, can be used as a fuel as apart from being abundant gas, possesses high energy density, [5] exhibits better combustion characteristics, [5] owes a nonpolluting nature, [6] and has several other favorable properties, listed in Table 1. Hydrogen is a promising alternative energy source [6,7] that overcomes most of the challenges faced by classical renewables.Figure 2 describes hydrogen energy transformation from primary energy sources to the end-users in an integrated way. The hydrogen production, storage, transportation and delivery, application, awareness and capacity building, safety codes and standards are all interrelated to form the hydrogen energy system. The two prime methods of producing hydrogen are i) from the conventional process, and ii) using renewable energy sources (such as biomass, solar, wind, and hydro). Hydrogen possesses significantly higher gravimetric energy density than other storage techniques (such as batteries, pumped hydropower, supercapacitors, Flywheels, pressurized air). The use of abundant renewable energy when available, hydrogen production, and storage is an optimal choice. Hydrogen can be stored as pressurized gas or as a cryogenic liquid or solid fuel. [27] Storage of hydrogen as a gas typically requires high-pressure tanks (350-700 bar tank pressure). Due to the low boiling point (−252.8 °C at atmospheric pressure), liquid hydrogen storage requires cryogenic temperature.The conventional conversion of fossil fuel feedstock to hydrogen includes steam-methane reforming, thermal cracking of natural gas, thermal decomposition (partial oxidation) of heavy oil, catalytic decomposition of natural gas, coal gasification, and steam-iron coal gasification. [20][21][22][23][24][25] When released into the atmosphere, the conventional methods generate CO 2 as a by-product, assisting global warming. The generation of renewable hydrogen makes it more economical and environmentally benign. Electrolysis uses electrical power supplied from renewables to produce hydrogen and oxygen. Biomass routes Hydrogen, a nonpolluting gas, is emerging as an ideal, suitable, and economical energy carrier. The current global non-carbon hydrogen production is 105.8 MW in 2020 and is expected to reach 218 MW in 2021. Hydrogen possesses low ignition energy of 0.017 mJ and reacts exothermically with air, posing severe safety challenges. Humanly undetectable gas needs accurate and sensitive sensors to prevent accidents. Amongst different hydrogen sensors currently developed, work function-based sensors are sensitive, selective, costeffective, smaller in size, less susceptible to environmental change, an...

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Hydrogen sensing characteristics of a Pt–oxide–Al0.3Ga0.7As MOS Schottky diode

Cited by 35 publications

References 18 publications

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

SiC-based MIS gas sensor for high water vapor environments

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

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