Characteristics of Pd/InGaP Schottky Diodes Hydrogen Sensors

Lin, Kun-Wei; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Lu, Chun-Tsen; Cheng, C. C.; Liu, Wen‐Chau

doi:10.1109/jsen.2003.820320

Cited by 47 publications

(17 citation statements)

References 26 publications

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“…The NW sensor reported here achieves a drift limited LOD of only 5 ppm and a sensitivity significantly exceeding that of nanosensors and several recently reported bulk diode designs [21][22][23]. Fig.…”

Section: Introductionmentioning

confidence: 78%

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Skucha

Fan

Jeon

et al. 2010

Sensors and Actuators B: Chemical

132

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a b s t r a c tThis work presents the design, fabrication, and characterization of a hydrogen sensor based on a palladium/nanowire Schottky barrier field-effect transistor that operates at room temperature. The fabricated sensor consists of boron-doped silicon nanowire arrays that are contact printed on top of a SiO 2 /Si substrate with subsequently evaporated Pd contacts. The fabrication process is compatible with post-CMOS and plastic substrate integration as it can be completed at temperatures below 150• C with good yield and repeatability. The sensor can reliably and reversibly detect H 2 concentrations in the range from 3 ppm to 5% and has a sensitivity of 6.9%/ppm at 1000 ppm. A response distinguishable from drift and noise is produced in less than 5 s for H 2 concentrations over 1000 ppm and less than 30 s for concentrations over 100 ppm. The sensor settles to 90% of the final signal value in about 1 h at lower concentrations and less than 1 min at 10,000 ppm H 2 . Drift over an 87-h measurement period is below 5 ppm H 2 concentration.

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Section: Introductionmentioning

confidence: 78%

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Skucha

Fan

Jeon

et al. 2010

Sensors and Actuators B: Chemical

132

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“…Hence, the variations of the reverse current for different hydrogen concentrations both in air and N 2 atmospheres are larger than those for the forward current, even at 570 K. Consequently, because of the large Schottky barrier height change, the Pd/GaN Schottky diode shows a considerably high hydrogen detection capability at high temperatures, especially under the reverse biased condition. Clearly, the Pd/GaN Schottky diode exhibits better thermal stability than other reported hydrogen sensors [19][20][21][22][23] and is a good candidate for hydrogen sensing over a wide operating temperature range. This wide temperature operating range is also a key factor in commercial sensor assessment besides the hydrogen detection sensitivity and response time.…”

Section: Resultsmentioning

confidence: 99%

“…According to the Langmuir isotherm equation, under the steady-state conditions, the coverage of hydrogen at the interface θ i can be expressed as [15,[20][21][22]:…”

Section: Resultsmentioning

confidence: 99%

Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N2 atmospheres

Huang

Hsu

Chen

et al. 2007

Sensors and Actuators B: Chemical

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“…Continuous monitoring of H 2 leak at storage or usage sites is indispensable for quick and safe operation. Several sensors are being operated for the detection of H 2 using: MEMS-based cantilevers [1], MOS [2][3][4][5] and MIS structures [6][7][8], FETs [9,10], ISFET transistors [11], diodes [12], Schottky diodes [13][14][15][16][17][18][19][20][21], switching devices [22], SAW systems [23][24][25], different metal oxides [26][27][28], metal and metal alloys [29][30][31], quartz-crystal micro-balance [32], and fiber-optic based sensors [33,34]. Each sensing device has its own advantage.…”

Section: Introductionmentioning

confidence: 99%

Sensor response time evaluations of trace hydrogen gaseous species with platinum using Kelvin Probe

Eranna

Paris

Doll³

2012

2012 IEEE Sensors

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Kelvin Probe (KP), a non-contact, non-destructive vibrating capacitor device, was used to measure the work function (WF) difference of thin Pt films, deposited on oxidized silicon substrates, with highly diluted H 2 gas, in ppm levels, in the presence of with and without relative humidity (RH). Response times were extracted from the behavior of WF shift as a function of H 2 concentration values. Measurements were compared for zero and non-zero RH conditions at a fixed temperature of 30 o C. Changes in WF were evaluated by using HP VEE program, suitably modified for the present measurements. The events were executed step by step for every second time interval through an input formatted file. The data was recorded at each event and was analyzed for the shift in WF with respect to the H 2 concentration. The shift in the WF and the response time (τ 90 ) at different concentration levels for the Pt films is reported in this paper. The presence of humidity shows saturation of response time after 500 ppm whereas zero humidity conditions show a continuous reduction at higher concentration values.

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Characteristics of Pd/InGaP Schottky Diodes Hydrogen Sensors

Cited by 47 publications

References 26 publications

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N2 atmospheres

Sensor response time evaluations of trace hydrogen gaseous species with platinum using Kelvin Probe

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